PA512 / SPA512
Cascadable Amplifier
10 to 500 MHz
Rev. V2
Features
Product Image
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HIGH POWER OUTPUT: +27.5 dBm (TYP.)
HIGH THIRD ORDER I.P.: +39 DBm (TYP.)
MODERTE NOISE FIGURE: 5.2 dB (TYP.)
GaAs FET AMPLIFIER
Description
The PA512 0.5 watt RF power amplifier is a discrete
hybrid design, which uses thin film manufacturing
processes for accurate performance and high reliability.
This 2 stage GaAs FET transistor design uses a feedback
loop for flat broadband performance. An active DC biasing
network insures temperatureꢀstable performance
.
MILꢀSTDꢀ883 environmental screening is available
.
Ordering Information
Part Number
Package
PA512
TOꢀ8
MAAMꢀ007502ꢀSPA512
MAAMꢀ007502ꢀCPA512
Surface Mount
SMA Connectorized
Electrical Specifications: Z0 = 50ꢀ, VCC = +15 VDC
Absolute Maximum Ratings
Parameter
Absolute
Typical
25ºC
Guaranteed
Maximum
ꢀ62ºC to +150ºC
+85ºC
Parameter
Units
0º to 50ºC -54º to +85ºC*
Storage Temperature
Case Temperature
DC Voltage
Frequency
MHz
10ꢀ700
10ꢀ500
10ꢀ500
+17 V
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
dB
dB
dB
18.0
±0.3
24
16.0
±0.7
15.0
±1.0
Continuous Input Power
+17 dBm
Short Term Input power
(1 minute max.)
100 mW
0.5 W
Peak Power (3 ꢁsec max.)
Noise Figure (max)
dB
5.2
6.0
6.5
“S” Series BurnꢀIn
Temperature (case)
+85ºC
Power Output
@ 1 dB comp. (min)
dBm
27.5
26.0
25.5
IP3
IP2
dBm
dBm
dBm
+33
+45
+50
Thermal Data: VCC = +15 VDC
Parameter
Rating
Second Order Harmonic IP
Thermal Resistance θjc
ºC/W
W
Transistor Power Dissipation Pd
VSWR Input / Output (max)
DC Current @ 15 Volts (max)
1.4:1 / 2.0:1 1.8:1 / 2.2:1
200 210
2.0:1 / 2.3:1
220
Junction Temperature Rise
Above Case Tjc
ºC
mA
* Over temperature performance limits for part number CPA512, guaranteed from 0oC to +50oC only.
1
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
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