Datasheet > P8010BIS

P8010BIS

更新时间： 2024-10-31 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	303K
描述
TO-251(S)

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中文翻译

获取价格

数据手册

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P8010BIS 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P8010BIS

NIKO-SEM

TO-251(IS)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

15A

85mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

100

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

E_AS

7.2

P_D

Power Dissipation

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

2.7

UNITS

°C / W

Junction-to-Case

R_JC

¹Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

V_DS= 80V, V_GS= 0V

1.3 1.8

2.3

±100 nA

Zero Gate Voltage Drain Current

On-State Drain Current¹

I_DSS

I_D(ON)

R_DS(ON)

g_fs

A

V_DS= 80V, V_GS= 0V, T_J= 125 °C

V_DS= 5V, V_GS= 10V

V_GS= 4.5V, I_D= 10A

Drain-Source On-State

Resistance₁

mΩ

V_GS= 10V , I_D= 15A

Forward Transconductance¹

V_DS= 5V, I_D= 15A

D-51-5

REV1.0

12 3 4

中文翻译

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