Datasheet > P75NF

P75NF

更新时间： 2024-11-17 21:54:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	384K
描述
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET

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P75NF 数据手册

STP75NF75L

STB75NF75L STB75NF75L-1

N-CHANNEL 75V - 0.009 Ω - 75A D PAK/I PAK/TO-220

STripFET™ II POWER MOSFET

TYPE

DSS

DS(on)

STB75NF75L/-1

STP75NF75L

75 V

<0.011 Ω

75 A

■

TYPICAL R (on) = 0.009Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW THRESHOLD DRIVE

I PAK

D PAK

TO-263

TO-262

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SOLENOID AND RELAY DRIVERS

DC MOTOR CONTROL

DC-DC CONVERTERS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 15

I (•)

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(••)

Drain Current (pulsed)

300

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

(2)

680

stg

-55 to 175

°C

Max. Operating Junction Temperature

(1) I ≤ 75A, di/dt ≤ 500A/µs, V ≤ V

, T ≤ T

j JMAX.

(•) Current limited by package

(••) Pulse width limited by safe operating area.

(BR)DSS

(2) Starting T = 25 C, I = 37.5A, V = 30V

April 2002

1/11

12 3 4 5 6 7...11

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