Datasheet > P7510EK

P7510EK

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	374K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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P7510EK 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

P7510EK

PDFN 5x6P

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

-100V

R_DS(ON)

I_D

-19A

75mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

UNITS

V_DS

V_GS

-100

±25

-19

-12

-45

-4.4

-3.5

-15

113

Gate-Source Voltage

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Avalanche Current

Avalanche Energy

I_AS

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Power Dissipation

Power Dissipation³

P_D

3.1

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

R_JA

R_JC

Junction-to-Ambient²

°C / W

Steady-State

Junction-to-Case

2.1

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

REV1.0

N-21-3

12 3 4 5

中文翻译

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