Datasheet > P6SMBJ85C-T1

P6SMBJ85C-T1

更新时间： 2024-11-05 06:33:07

品牌	Logo	应用领域
WTE		局域网光电二极管
页数	文件大小	规格书
5页	72K
描述
Trans Voltage Suppressor Diode, 600W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

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P6SMBJ85C-T1 数据手册

WTE

PO WER SEMICONDUCTORS

P6SMBJ SERIES

600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS

Features

Glass Passivated Die Construction

600W Peak Pulse Power Dissipation

5.0V – 170V Standoff Voltage

Uni- and Bi-Directional Versions Available

Excellent Clamping Capability

Fast Response Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB/DO-214AA

Min

Mechanical Data

Dim

Max

3.94

4.70

2.11

Case: JEDEC DO-214AA Low Profile Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

3.30

4.06

1.91

Polarity: Cathode Band or Cathode Notch

Marking:

Unidirectional – Device Code and Cathode Band

Bidirectional – Device Code Only

Weight: 0.093 grams (approx.)

0.152

5.08

0.305

5.59

2.44

0.203

1.27

2.13

0.051

0.76

All Dimensions in mm

“C” Suffix Designates Bi-directional Devices

“A” Suffix Designates 5% Tolerance Devices

No Suffix Designates 10% Tolerance Devices

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

P^PPM

Value

Unit

Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3

Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4

600 Minimum

See Table 1

I^PPM

Peak Forward Surge Current 8.3ms Single Half Sine-Wave

Superimposed on Rated Load (JEDEC Method) (Note 2, 3)

I^FSM

100

Operating and Storage Temperature Range

T^j, T^STG

-55 to +150

°C

Note: 1. Non-repetitive current pulse, per Figure 4 and derated above T_A= 25°C per Figure 1.

2. Mounted on 5.0mm²(0.013mm thick) land areas.

3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.

P6SMBJ SERIES

1 of 5

12 3 4 5

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