Datasheet > P6SMBJ51-T3-LF

P6SMBJ51-T3-LF

更新时间： 2024-11-13 20:40:43

品牌	Logo	应用领域
WTE		局域网光电二极管
页数	文件大小	规格书
6页	98K
描述
Trans Voltage Suppressor Diode, 600W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P6SMBJ51-T3-LF 数据手册

WTE

POWER SEMICONDUCTORS

P6SMBJ SERIES

600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features

ꢀ

Glass Passivated Die Construction

ꢀ

600W Peak Pulse Power Dissipation

5.0V – 170V Standoff Voltage

Uni- and Bi-Directional Versions Available

Excellent Clamping Capability

Fast Response Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB/DO-214AA

Min

Mechanical Data

Dim

Max

3.94

4.70

2.11

ꢀ

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

3.30

ꢀ

4.06

1.91

ꢀ

Polarity: Cathode Band Except Bi-Directional

Marking: Device Code

Weight: 0.093 grams (approx.)

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 6

0.152

5.08

0.305

5.59

2.44

0.203

1.27

2.13

0.051

0.76

All Dimensions in mm

“C” Suffix Designates Bi-directional Devices

“A” Suffix Designates 5% Tolerance Devices

No Suffix Designates 10% Tolerance Devices

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Symbol

Value

600 Minimum

See Table 1

5.0

Unit

Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3

Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4

Steady State Power Dissipation (Note 4)

PPPM

IPPM

PM(AV)

Peak Forward Surge Current 8.3ms Single Half Sine-Wave

Superimposed on Rated Load (JEDEC Method) (Note 2, 3)

I^FSM

100

Typical Thermal Resistance ,Junction to Lead (Note 5)

Typical Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

RθJL

RθJA

100

°C/W

°C

Tj, TSTG

-55 to +150

Note: 1. Non-repetitive current pulse per Figure 4 and derated above T_A= 25°C per Figure 1.

2. Mounted on 5.0mm²(0.013mm thick) land area.

3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.

4. Lead temperature at 75°C.

5. Mounted on minimum recommended pad layout.

P6SMBJ SERIES

1 of 6

12 3 4 5 6

中文翻译

下载PDF

与P6SMBJ51-T3-LF相关器件

型号	品牌	获取价格	描述	数据表
P6SMBJ530	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 477V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMBJ530A	THINKISEMI	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
P6SMBJ530A	LITTELFUSE	获取价格	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Supressors
P6SMBJ530A	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 477V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMBJ530AP	MCC	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress
P6SMBJ530CA	LITTELFUSE	获取价格	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Supressors
P6SMBJ530CA	THINKISEMI	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
P6SMBJ530CA	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 477V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P6SMBJ54	YEASHIN	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 440 Volts 6 00 Watt Peak Power
P6SMBJ54	CHENG-YI	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

与P6SMBJ51-T3-LF相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMBJ51-T3-LF

P6SMBJ51-T3-LF 数据手册

与P6SMBJ51-T3-LF相关器件

与P6SMBJ51-T3-LF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMBJ51-T3-LF

P6SMBJ51-T3-LF 数据手册

与P6SMBJ51-T3-LF相关器件

与P6SMBJ51-T3-LF相关文章

您还可以找

您在本页遇到什么问题？