Datasheet > P6SMBJ30A

P6SMBJ30A

更新时间： 2024-11-11 12:33:19

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
2页	271K
描述
For surface mounted applications in order to optimize board space

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P6SMBJ30A 数据手册

Product specification

P6SMBJ30A

Unit: mm

DO-214AA(SMB)

■ Features

4.12

3.92

4.699

4.064

● For surface mounted applications in order to optimize board space.

2.108

1.905

● Low profile package

3.937

2.30

3.302 2.10

● Built-in strain relief

● Glass passivated junction

● Excellent clamping capability

● Low inductance

2.65

2.45

5.588

5.080

5.59

5.39

Recommended

Land Pattern

2.348

2.108

0.305

0.152

1.270

0.762

0.203

0.051

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

PPPM

Ratings

Units

Minimum 600

100

Peak Power Dissipation at TA=25℃, TP=1ms (Note 1,2)

Peak Forward Surge Current

(Note 2,3)

IFSM

Peak Pulse Current Current on 10/1000μs waveform (Note 1)

IPPM

See Table

-55 to +150

Operating and Storage Temperature Range

Tj, TSTG

℃

■ Electrical Characteristics Ta = 25℃

Max.

Clamp

Voltage

Peak

Pulse

Current

Breakdown

Voltage

Reverse

Stand-off Voltage

Test

Current

Reverse Leakage

I R @ VRWM

Part Number

VBR @ I T

VRWM

VC @ IPP

I PP

Min.

Max.

1.0

μA

P6SMBJ30A

33.3

38.3

48.4

12.4

NOTES:

1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25℃ per

2.Mounted on 5.0mm²( .013mm thick) land areas.

3.Measured on 8.3ms , single half sine-wave or equivalent square wave , duty cycle= 4 pulses per minutes maximum.

■ Marking

Marking

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

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