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P6SMBJ110CA-T1 PDF预览

P6SMBJ110CA-T1

更新时间: 2024-02-19 04:26:48
品牌 Logo 应用领域
WTE 局域网光电二极管
页数 文件大小 规格书
5页 72K
描述
Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

P6SMBJ110CA-T1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.88
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压:140.5 V最小击穿电压:122 V
击穿电压标称值:131.25 V最大钳位电压:177 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大重复峰值反向电压:110 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P6SMBJ110CA-T1 数据手册

 浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第2页浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第3页浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第4页浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第5页 
WTE  
PO WER SEMICONDUCTORS  
P6SMBJ SERIES  
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
600W Peak Pulse Power Dissipation  
5.0V – 170V Standoff Voltage  
Uni- and Bi-Directional Versions Available  
Excellent Clamping Capability  
Fast Response Time  
B
D
A
F
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
C
H
G
E
SMB/DO-214AA  
Min  
Mechanical Data  
Dim  
A
Max  
3.94  
4.70  
2.11  
!
!
Case: JEDEC DO-214AA Low Profile Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
3.30  
B
4.06  
C
1.91  
!
!
Polarity: Cathode Band or Cathode Notch  
Marking:  
Unidirectional – Device Code and Cathode Band  
Bidirectional – Device Code Only  
Weight: 0.093 grams (approx.)  
D
0.152  
5.08  
0.305  
5.59  
2.44  
0.203  
1.27  
E
F
2.13  
G
H
0.051  
0.76  
!
All Dimensions in mm  
“C” Suffix Designates Bi-directional Devices  
“A” Suffix Designates 5% Tolerance Devices  
No Suffix Designates 10% Tolerance Devices  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
PPPM  
Value  
Unit  
W
Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3  
Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4  
600 Minimum  
See Table 1  
IPPM  
A
Peak Forward Surge Current 8.3ms Single Half Sine-Wave  
Superimposed on Rated Load (JEDEC Method) (Note 2, 3)  
IFSM  
100  
A
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
°C  
Note: 1. Non-repetitive current pulse, per Figure 4 and derated above TA = 25°C per Figure 1.  
2. Mounted on 5.0mm2 (0.013mm thick) land areas.  
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.  
P6SMBJ SERIES  
1 of 5  
© 2002 Won-Top Electronics  

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