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P6SMB9.1CA PDF预览

P6SMB9.1CA

更新时间: 2024-12-02 14:48:43
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江苏长电/长晶 - CJ /
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SMBG

P6SMB9.1CA 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SMBG Plastic-Encapsulate Diodes  
ent Voltage Suppressor Diodes  
P6SMB  
Features  
SMBG  
PPP  
600W  
5.8V- 513V  
VRWM  
Glass passivated chip  
Applications  
Clamping Voltage  
Bi-directional  
Uni-direction  
Marking  
P6SMBXXCA/XXA  
:
XX  
From 6.8 To 600  
Conditions  
Item  
Symbol  
Max  
Unit  
PPPM  
Peak pulse power dissipation  
Peak pulse current(1)  
Power dissipation  
W
600  
with a 10/1000us waveform  
with a 10/1000us waveform  
IPPM  
A
See Next Table  
PD  
5.0  
W
On infinite heat sink at TL=75  
IFSM  
8.3 ms single half sine-wave unidirectional only  
100  
A
Peak forward surge current(2)  
Operating junction and  
storage temperature range  
TJ,TSTG  
-55 to +150  
T =25Unless otherwise specified)  
Electrical Characteristics  
Item  
a
Symbol  
Max  
Unit  
Conditions  
at 35A for unidirectional only  
junction to lead  
Maximum instantaneous forward  
Voltage (3)  
VF  
V
3.5/5.0  
RθJL  
RθJA  
/W  
/W  
20  
Thermal resistance  
junction to ambientLLead = 10 mm  
100  
Notes:  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per Fig. 3 and derated above TA= 25per Fig.2.  
Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
www.jscj-elec.com  
Rev. - 1.0  
1

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