Datasheet > P6SMB510A??

P6SMB510A??

更新时间： 2024-11-27 18:03:59

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
5页	1432K
描述
DO-214AA/SMB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P6SMB510A?? 数据手册

P6SMB6.8(C)A P6SMB550(C)A

Stand-off Voltage - 6.8 to 550 Volts Peak Pulse Power: 600 Watts

SURFACE MOUNT TRANSISIENT VOLTAGE SUPPRESSOR

Features

For surface mounted applications in order to optimize board

space Low profile package

DO-214AA/SMB



Built-in strain relief

0.155(3.94)

0.130(3.30)

0.086 (2.20)

0.071 (1.80)

Glass passivated junction

Low inductance



Excellent clamping capability



0.185(4.70)

0.160(4.06)

600W peak pulse power capability at 10/1000μs waveform,

repetition rate (duty cycle): 0.01%



0.012(0.305)

0.006(0.152)

Fast response time

Typical IR less than 1μA above 12V

High Temperature soldering: 260℃/ 40 seconds at terminals

Plastic package has underwriters laboratory flammability 94V-0

0.096(2.44)

0.084(2.13)

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

0.220(5.59)

0.200(5.08)

Mechanical Data

Case : JEDEC DO-214AA/SMB molded plastic body

Terminals : Solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Dimensions in inches and (millimeters)

Mounting Position: Any

Weight

: 0.003 ounce, 0.095 grams

Applications

I/O interface

AC/DC power supply

Industrial and Consumer electronic applications.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Peak Pulse Power Dissipation at

(Note 1), (Note 2)

(Fig.1)

T_A=25ºC by 10x1000μs waveform

P_PPM

P_M(AV)

I_FSM

600

5.0

W atts

Power Dissipation on inﬁnite heat sink at T_A=50^O

100

Amps

Single Half Sine Wave (Note 3)

Peak Forward Surge Current, 8.3ms

Maximum Instantaneous Forward

only (Note 4)

Voltage at 50A for Unidirectional

Temperature Range

V_F

3.5V/5.0

-65 to +150

Operating Junction and Storage

T_J,T_STG

R_θJL

℃

TypicalThermal Resistance Junction

to Lead

℃ /W

R_θJA

100

to Ambient

Notes:

(1)Non-repetitive current pulse , per Fig. 3 and derated above T = 25℃per Fig. 2.

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

DN:T21926A1

http://www.microdiode.com

Rev:2021A1

Page :1

12 3 4 5

中文翻译

下载PDF

与P6SMB510A??相关器件

型号	品牌	获取价格	描述	数据表
P6SMB510A-5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P6SMB510A-E3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB510A-E3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB510AHE3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-M3/52	VISHAY	获取价格	TVS DIODE 434V 698V DO214AA

与P6SMB510A??相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB510A??

P6SMB510A?? 数据手册

与P6SMB510A??相关器件

与P6SMB510A??相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB510A??

P6SMB510A?? 数据手册

与P6SMB510A??相关器件

与P6SMB510A??相关文章

您还可以找

您在本页遇到什么问题？