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P6SMB480A-E3/52 PDF预览

P6SMB480A-E3/52

更新时间： 2024-11-19 22:55:11
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
6页 119K
描述
TVS DIODE 408V 658V DO214AA

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中文翻译

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P6SMB480A-E3/52 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：7.33
其他特性：EXCELLENT CLAMPING CAPABILITY最大击穿电压：504 V
最小击穿电压：456 V击穿电压标称值：480 V
外壳连接：ISOLATED最大钳位电压：658 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified最大重复峰值反向电压：408 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

P6SMB480A-E3/52 数据手册

 浏览型号P6SMB480A-E3/52的Datasheet PDF文件第2页浏览型号P6SMB480A-E3/52的Datasheet PDF文件第3页浏览型号P6SMB480A-E3/52的Datasheet PDF文件第4页浏览型号P6SMB480A-E3/52的Datasheet PDF文件第5页浏览型号P6SMB480A-E3/52的Datasheet PDF文件第6页 
P6SMB Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface-Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
Available  
• Excellent clamping capability  
• Very fast response time  
SMB (DO-214AA)  
Cathode  
Anode  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
(unidirectional)  
(bidirectional)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
PRIMARY CHARACTERISTICS  
VWM (unidirectional)  
WM (bidirectional)  
BR (unidirectional)  
5.8 V to 459 V  
V
5.8 V to 185 V  
6.8 V to 540 V  
6.8 V to 220 V  
600 W  
V
MECHANICAL DATA  
VBR (bidirectional)  
Case: SMB (DO-214AA)  
PPPM  
PD  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
5.0 W  
IFSM (unidirectional only)  
100 A  
TJ max.  
150 °C  
Polarity  
Unidirectional, bidirectional  
SMB (DO-214AA)  
Package  
(“_X” denotes revision code e.g. A, B, ...)  
DEVICES FOR BIDIRECTION APPLICATIONS  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
For bidirectional devices use CA suffix (e.g. P6SMB10CA).  
Electrical characteristics apply in both directions.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
5.0  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 19-Apr-2021  
Document Number: 88370  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

中文翻译

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P6SMB480A-E3/52 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB480A-M3/52 VISHAY

完全替代

 TVS DIODE 408V 658V DO214AA
P6SMB480AHE3_AIH VISHAY

完全替代

 TVS DIODE 408V 658V DO214AA
P6SMB480AHE3_A/I VISHAY

完全替代

 Trans Voltage Suppressor Diode, 600W, 408V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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 		P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。

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