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P6SMB250AHE3_AIH PDF预览

P6SMB250AHE3_AIH

更新时间: 2022-09-29 19:08:10
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
6页 119K
描述
TVS DIODE 214V 344V DO214AA

P6SMB250AHE3_AIH 数据手册

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P6SMB Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface-Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
Available  
• Excellent clamping capability  
• Very fast response time  
SMB (DO-214AA)  
Cathode  
Anode  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
(unidirectional)  
(bidirectional)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
PRIMARY CHARACTERISTICS  
VWM (unidirectional)  
WM (bidirectional)  
BR (unidirectional)  
5.8 V to 459 V  
V
5.8 V to 185 V  
6.8 V to 540 V  
6.8 V to 220 V  
600 W  
V
MECHANICAL DATA  
VBR (bidirectional)  
Case: SMB (DO-214AA)  
PPPM  
PD  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
5.0 W  
IFSM (unidirectional only)  
100 A  
TJ max.  
150 °C  
Polarity  
Unidirectional, bidirectional  
SMB (DO-214AA)  
Package  
(“_X” denotes revision code e.g. A, B, ...)  
DEVICES FOR BIDIRECTION APPLICATIONS  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
For bidirectional devices use CA suffix (e.g. P6SMB10CA).  
Electrical characteristics apply in both directions.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
5.0  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 19-Apr-2021  
Document Number: 88370  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

P6SMB250AHE3_AIH 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB250AHE3_AIH VISHAY

当前型号

TVS DIODE 214V 344V DO214AA
P6SMB250AHE3_A/I VISHAY

完全替代

Trans Voltage Suppressor Diode, 600W, 214V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB250AHE3_A/H VISHAY

完全替代

Trans Voltage Suppressor Diode, 600W, 214V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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