5秒后页面跳转
P6SMB150A?? PDF预览

P6SMB150A??

更新时间: 2024-11-07 18:03:59
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
5页 1432K
描述
DO-214AA/SMB

P6SMB150A?? 数据手册

 浏览型号P6SMB150A??的Datasheet PDF文件第2页浏览型号P6SMB150A??的Datasheet PDF文件第3页浏览型号P6SMB150A??的Datasheet PDF文件第4页浏览型号P6SMB150A??的Datasheet PDF文件第5页 
P6SMB6.8(C)A P6SMB550(C)A  
Stand-off Voltage - 6.8 to 550 Volts Peak Pulse Power: 600 Watts  
SURFACE MOUNT TRANSISIENT VOLTAGE SUPPRESSOR  
Features  
For surface mounted applications in order to optimize board  
space Low profile package  
DO-214AA/SMB  
Built-in strain relief  
0.155(3.94)  
0.130(3.30)  
0.086 (2.20)  
0.071 (1.80)  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
0.185(4.70)  
0.160(4.06)  
600W peak pulse power capability at 10/1000μs waveform,  
repetition rate (duty cycle): 0.01%  
0.012(0.305)  
0.006(0.152)  
Fast response time  
Typical IR less than 1μA above 12V  
High Temperature soldering: 260/ 40 seconds at terminals  
Plastic package has underwriters laboratory flammability 94V-0  
0.096(2.44)  
0.084(2.13)  
0.060(1.52)  
0.030(0.76)  
0.008(0.203)MAX.  
0.220(5.59)  
0.200(5.08)  
Mechanical Data  
Case : JEDEC DO-214AA/SMB molded plastic body  
Terminals : Solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Dimensions in inches and (millimeters)  
Mounting Position: Any  
Weight  
: 0.003 ounce, 0.095 grams  
Applications  
I/O interface  
AC/DC power supply  
Industrial and Consumer electronic applications.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified.  
Peak Pulse Power Dissipation at  
(Note 1), (Note 2)  
(Fig.1)  
TA=25ºC by 10x1000μs waveform  
PPPM  
PM(AV)  
IFSM  
600  
5.0  
W atts  
W atts  
Power Dissipation on infinite heat sink at TA=50O  
C
100  
Amps  
Single Half Sine Wave (Note 3)  
Peak Forward Surge Current, 8.3ms  
Maximum Instantaneous Forward  
only (Note 4)  
Voltage at 50A for Unidirectional  
Temperature Range  
VF  
3.5V/5.0  
-65 to +150  
20  
V
Operating Junction and Storage  
TJ,TSTG  
RθJL  
TypicalThermal Resistance Junction  
TypicalThermal Resistance Junction  
to Lead  
/W  
/W  
RθJA  
100  
to Ambient  
Notes:  
(1)Non-repetitive current pulse , per Fig. 3 and derated above T = 25per Fig. 2.  
A
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
DN:T21926A1  
http://www.microdiode.com  
Rev:2021A1  
Page :1  

与P6SMB150A??相关器件

型号 品牌 获取价格 描述 数据表
P6SMB150A-51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB150A-52 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB150A-5B VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB150A-AT YAGEO

获取价格

瞬态抑制二极管 (车用)
P6SMB150AC TSC

获取价格

Surface Mount Transient Voltage Suppressor
P6SMB150ACA TSC

获取价格

Surface Mount Transient Voltage Suppressor
P6SMB150A-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
P6SMB150A-E3/52 VISHAY

获取价格

TVS DIODE 128V 207V DO214AA
P6SMB150A-E3/5B VISHAY

获取价格

TVS DIODE 128V 207V DO214AA
P6SMB150AHE3/52 VISHAY

获取价格

TVS DIODE 128V 207V DO214AA