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P6KE82C-B PDF预览

P6KE82C-B

更新时间: 2024-11-04 13:12:11
品牌 Logo 应用领域
美台 - DIODES 二极管局域网
页数 文件大小 规格书
4页 72K
描述
Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon

P6KE82C-B 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.57
Is Samacsys:N其他特性:TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
最小击穿电压:73.8 V外壳连接:ISOLATED
最大钳位电压:118 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-LALF-W2最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
认证状态:Not Qualified最大反向电流:5 µA
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

P6KE82C-B 数据手册

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P6KE6V8(C)A - P6KE400(C)A  
600W TRANSIENT VOLTAGE SUPPRESSOR  
Features  
·
·
·
·
·
·
600W Peak Pulse Power Dissipation  
Voltage Range 6.8V - 400V  
Constructed with Glass Passivated Die  
Uni- and Bidirectional Versions Available  
Excellent Clamping Capability  
Fast Response Time  
A
B
A
C
D
Mechanical Data  
·
·
Case: Transfer Molded Epoxy  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Leads: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Marking: Unidirectional - Type Number and  
Cathode Band  
Marking: Bidirectional - Type Number Only  
Approx. Weight: 0.4 grams  
DO-15  
Min  
Dim  
A
Max  
25.40  
5.50  
·
·
B
7.62  
0.889  
3.6  
C
0.686  
2.60  
·
D
All Dimensions in mm  
·
·
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
Peak Power Dissipation, tp = 1.0 ms  
Ppk  
Pd  
600  
W
(Non repetitive current pulse, derated above TA = 25°C)  
Steady State Power Dissipation at TL = 75°C  
Lead Lengths 9.5 mm (Mounted on Copper Land Area of 40mm)  
5.0  
W
A
2
Peak Forward Surge Current, 8.3 ms Single Half Sine Wave, Superimposed  
on Rated Load (JEDEC Method) Duty Cycle = 4 pulses per minute maximum  
IFSM  
100  
Forward Voltage @ IF = 35A  
V
BR £ 200V  
3.5  
5.0  
VF  
Tj, TSTG  
V
300µs Square Wave Pulse, Unidirectional Only  
VBR > 200V  
Operating and Storage Temperature Range  
-55 to +175  
°C  
Notes:  
1. Suffix ‘C’ denotes bidirectional device.  
2. For bidirectional devices having VR of 10 volts and under, the IR limit is doubled.  
DS21502 Rev. 12 - 2  
1 of 4  
P6KE6V8(C)A - P6KE400(C)A  

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