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P6A4G PDF预览

P6A4G

更新时间: 2024-11-06 15:19:03
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 208K
描述
R-6

P6A4G 数据手册

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RoHS  
P6A05G THRU P6A10G  
COMPLIANT  
General Purpose Rectifier  
Features  
● High efficiency  
● High current capability  
● High reliability  
● High surge current capability  
● Low power loss  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
For use in general purpose rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
Mechanical Data  
ackage: R-6  
P
Molding compound meets UL 94 V-0 flammability rating,  
RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Color band denotes cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
■Maximum Ratings  
P6A05G P6A1G  
P6A2G  
P6A2G  
200  
P6A4G  
P6A4G  
400  
P6A6G  
P6A6G  
600  
P6A8G P6A10G  
PARAMETER  
SYMBOL UNIT  
P6A05G P6A1G  
P6A8G P6A10G  
Device marking code  
V
V
V
V
V
A
50  
35  
50  
100  
70  
800  
560  
800  
1000  
700  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
140  
280  
420  
V
100  
200  
400  
600  
1000  
Maximum DC blocking Voltage  
DC  
Average Forward Current  
@60Hz sine wave, Resistance load, Ta =75  
IF(AV)  
6.0  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
200  
IFSM  
A
400  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t8.3≤ms Tj=25Rating of per diode  
Typical junction capacitance  
@Measured at 1MHz and Applied Reverse  
Voltage of 4.0 V.D.C  
A2s  
pF  
I2t  
Cj  
166  
45  
T
-55 ~ +150  
-55 ~ +150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
P6A05G P6A1G P6A2G P6A4G P6A6G P6A8G P6A10G  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
V
I
FM=6.0A  
V
1.1  
2.5  
F
T =25℃  
j
Maximum DC reverse current  
at rated DC blocking voltage per  
diode  
I
μA  
R
100  
T =125℃  
j
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-A120  
Rev.2.2,30-Jan-21  
www.21yangjie.com  

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