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P6803NAG PDF预览

P6803NAG

更新时间: 2024-11-07 03:43:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 123K
描述
N- & P-Channel Enhancement Mode Field Effect Transistor

P6803NAG 数据手册

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P6803NAG  
TSOP-6  
NIKO-SEM  
N- & P-Channel Enhancement Mode  
Field Effect Transistor  
Lead-Free  
D1 S1 D2  
PRODUCT SUMMARY  
D1  
S1  
D2  
S2  
V(BR)DSS RDS(ON)  
ID  
6
1
5
2
4
3
G : GATE  
D : DRAIN  
S : SOURCE  
G1  
G2  
68mΩ  
N-Channel  
P-Channel  
30  
3.5A  
-2A  
145mΩ  
-30  
G1 S2 G2  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
N-Channel P-Channel UNITS  
30  
±20  
3.5  
2.8  
10  
-30  
±20  
-2.3  
-1.8  
-10  
V
V
Gate-Source Voltage  
VGS  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current  
Pulsed Drain Current1  
ID  
A
IDM  
PD  
TC = 25 °C  
TC = 70 °C  
1.15  
0.73  
Power Dissipation  
W
Junction & Storage Temperature Range  
Lead Temperature (1/16” from case for 10 sec.)  
Tj, Tstg  
TL  
-55 to 150  
275  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RθJA  
TYPICAL  
MAXIMUM  
UNITS  
Junction-to-Ambient  
Junction-to-Ambient Steady State  
Junction-to-Lead Steady State  
110  
150  
80  
°C / W  
°C / W  
°C / W  
t5sec  
RθJA  
RθJL  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
MAR-09-2006  
1

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