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P6606_15

更新时间： 2024-09-19 01:26:27
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InSb photoconductive detectors

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P6606_15 数据手册

 浏览型号P6606_15的Datasheet PDF文件第2页浏览型号P6606_15的Datasheet PDF文件第3页浏览型号P6606_15的Datasheet PDF文件第4页浏览型号P6606_15的Datasheet PDF文件第5页 
InSb photoconductive detectors  
P6606 series  
Thermoelectrically cooled detectors capable  
of long-term measurements  
Features  
Applications  
Thermoelectric cooling ensures high speed and high  
sensitivity up to 6.5 μm.  
Environment measurements (gas analysis, etc.)  
Radiation thermometers (5 μm band)  
FTIR  
Photoconductive element that changes electrical  
resistance by input of IR radiation  
IR laser detection  
Easy-to-use detector/preamp modules are also available.  
Related products (sold separately)  
Heatsink for one/two-stage TE-cooled type A3179-01  
Heatsink for three-stage TE-cooled type  
A3179-04  
Temperature controller  
C1103-05 (-75 to -25 °C)  
C1103-07 (-30 to +20 °C)  
Preamp  
C5185-02  
Infrared detector module with preamp  
P4631-03 (P6606-310)  
Specifications / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
Photosensitive  
Thermistor TE-cooler  
power  
dissipation dissipation  
Operating  
temperature temperature  
Storage  
Incideut  
light level  
Allowable  
current  
outline/  
Window  
area  
power  
Type no.  
Package  
Cooling  
Topr  
(°C)  
Tstg  
(°C)  
1
material  
*
(mm)  
1 × 1  
(mW)  
400  
100  
(mW)  
0.2  
(A)  
1.5  
1.0  
(mA)  
40  
P6606-110  
One-stage TE-cooled  
Two-stage TE-cooled  
/S  
TO-8  
TO-3  
P6606-210  
P6606-305  
P6606-310  
P6606-320  
0.5 × 0.5  
1 × 1  
2 × 2  
20  
40  
60  
-40 to +60 -55 to +60  
Three-stage  
TE-cooled  
/S  
10  
1.0  
*1: Window material S=Sapphire glass  
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the  
product within the absolute maximum ratings.  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
condition  
Element  
temperature  
T
Peak  
sensitivity  
wavelength  
λp  
Photo-  
sensitivity*2  
S
Cutoff  
wavelength  
Rise time  
tr  
0 to 63%  
Dark  
Thermistor  
D*  
D*  
resistance resistance  
(500, 1200, 1)  
(λp, 1200, 1)  
Rd  
Tc=25 °C  
λ
c
Type no.  
λ=λp  
Min.  
Typ.  
(°C)  
-10  
-30  
(μm)  
(μm)  
6.7  
6.5  
(V/W)  
10  
50  
2500  
650  
150  
(cm · Hz1/2/W) (cm · Hz1/2/W) (cm · Hz1/2/W)  
(μs)  
(Ω)  
20  
25  
150  
80  
80  
(kΩ)  
P6606-110  
7
107  
×
2
5
2
2
1
108  
108  
109  
109  
109  
1
109  
×
×
×
×
×
×
×
P6606-210  
P6606-305  
P6606-310  
P6606-320  
1.5 108  
2.5 109  
×
5.5  
1
1
5
109  
109  
108  
1
1
5
1010  
1010  
109  
0.4  
1.3  
×
×
×
×
×
×
-60  
6.3  
*2: Photosensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.  
1
www.hamamatsu.com  
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