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P6606-305

更新时间: 2024-09-17 22:26:59
品牌 Logo 应用领域
HAMAMATSU 光电光电器件
页数 文件大小 规格书
4页 156K
描述
InSb photoconductive detector

P6606-305 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-3, 8 PINReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.59
Is Samacsys:N配置:COMPLEX
功能数量:1最高工作温度:60 °C
最低工作温度:-40 °C光电设备类型:OPTOELECTRONIC DEVICE
Base Number Matches:1

P6606-305 数据手册

 浏览型号P6606-305的Datasheet PDF文件第2页浏览型号P6606-305的Datasheet PDF文件第3页浏览型号P6606-305的Datasheet PDF文件第4页 
I N F R A R E D D E T E C T O R  
InSb photoconductive detector  
P6606 series  
Thermoelectrically cooled detectors capable of long-term measurements  
Features  
Applications  
Thermoelectric cooling ensures high speed and high  
sensitivity up to 6.5 µm.  
Photoconductive element that changes electrical  
resistance by input of IR radiation  
Environment measurements (gas analysis, etc.)  
Radiation thermometers (5 µm band)  
FTIR  
IR laser detection  
Easy-to-use detector/preamp modules are also available.  
Accessories (optional)  
Heatsink for one-stage TE-cooled type  
Heatsink for two-stage TE-cooled type  
A3179  
A3179-01  
Heatsink for three-stage TE-cooled type A3179-04  
Temperature controller  
C1103-05 (-75 to -25 ˚C)  
C1103-07 (-30 to +20 ˚C)  
C5185  
Preamp  
Infrared detector module with preamp  
C4631-03 (P6606-310)  
Specifications / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
Active  
Thermistor TE-cooler  
power power  
dissipation dissipation  
Operating  
Storage  
temperature temperature  
outline/  
Window  
Allowable  
current  
area  
Type No.  
Package  
Cooling  
Topr  
(°C)  
Tstg  
(°C)  
material *1  
(mm)  
1 × 1  
(mW)  
(A)  
1.5  
1.0  
(mA)  
40  
P6606-110  
P6606-210  
P6606-305  
P6606-310  
P6606-320  
One-stage TE-cooled  
Two-stage TE-cooled  
/S  
TO-8  
0.5 × 0.5  
TO-3 Three-stage TE-cooled 1 × 1  
2 × 2  
0.2  
20  
40  
60  
-40 to +60 -55 to +60  
/S  
1.0  
*1: Window material S: Sapphire glass  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
condition  
Element  
temperature  
T
Photo  
sensitivity  
S
Peak  
sensitivity  
wavelength  
lp  
Cut-off  
wavelength  
lc  
Rise time  
tr  
0 to 63 %  
Dark  
resistance  
Rd  
*
*
D
(lp, 1200, 1)  
D
(500, 1200, 1)  
l=lp  
Vs=15 V  
Type No.  
Min.  
Typ.  
(°C)  
-10  
-30  
(V/W)  
10  
50  
(cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W)  
(mm)  
(mm)  
6.7  
6.5  
(ms)  
(W)  
20  
P6606-110  
P6606-210  
P6606-305  
P6606-310  
P6606-320  
7 × 107  
1.5 × 108  
1 × 109  
1 × 109  
5 × 108  
2 × 108  
5 × 108  
2 × 109  
2 × 109  
1 × 109  
1 × 109  
2.5 × 109  
1 × 1010  
1 × 1010  
5 × 109  
25  
5.5  
2500  
650  
150  
0.4  
150  
80  
-60  
6.3  
80  
1

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