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P600S(G) PDF预览

P600S(G)

更新时间: 2024-11-10 14:53:43
品牌 Logo 应用领域
鲁光 - LGE 整流二极管普通整流二极管
页数 文件大小 规格书
2页 1041K
描述
普通整流二极管

P600S(G) 技术参数

Case Style:R-6IF(A):6.0
Maximum recurrent peak reverse voltage:1200Peak forward surge current:400
Maximum instantaneous forward voltage:1.0@IVA(A):6.0
Maximum reverse current:5.0TRR(nS):/
class:Diodes

P600S(G) 数据手册

 浏览型号P600S(G)的Datasheet PDF文件第2页 
P600A-P600S  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1200 V  
CURRENT: 6.0 A  
R - 6  
Features  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned witn Freon,Alcohol,lsopropanol  
j
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC R-6,molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.072 ounces,2.04 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
P600 P600  
P600 P600 P600 P600 P600 P600  
UNITS  
A
B
D
G
J
K
M
S
V
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
MaximumDC blocking voltage  
100  
1000  
1200  
Maximumaverage forw ard rectified current  
A
6.0  
IF(AV)  
9.5mmlead length,  
@TA=60  
Peak forw ard surge current  
IFSM  
400  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximuminstantaneous forw ard voltage  
@ 6.0 A  
V
A
0.9  
1.0  
VF  
IR  
Maximumreverse current  
@TA=25  
5.0  
1000  
150  
20  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
CJ  
R
/W  
JA  
θ
Operating junction temperature range  
Storage temperature range  
-55----+150  
-55----+150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance f rom junction to ambient.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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