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P600G PDF预览

P600G

更新时间: 2024-10-03 14:52:47
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 40K
描述
Axial

P600G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.08
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:400 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P600G 数据手册

 浏览型号P600G的Datasheet PDF文件第2页浏览型号P600G的Datasheet PDF文件第3页浏览型号P600G的Datasheet PDF文件第4页 
®
P600A – P600S  
6.0A STANDARD DIODE  
WON-TOP ELECTRONICS  
Features  
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
Case: P-600, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 2.1 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
P-600  
Min  
Dim  
A
Max  
25.4  
8.60  
1.20  
8.60  
B
9.10  
1.30  
9.10  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
P600 P600 P600 P600 P600 P600 P600 P600  
Characteristic  
Symbol  
Unit  
A
B
D
G
J
K
M
S
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
200  
400  
600  
800 1000 1200  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
140  
280  
420  
560  
700  
840  
V
A
Average Rectified Output Current (Note 1) @TA = 60°C  
6.0  
400  
1.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
A
V
Forward Voltage  
@IF = 6.0A  
VFM  
IRM  
CJ  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
1.0  
µA  
mA  
Typical Junction Capacitance (Note 2)  
150  
pF  
°C/W  
°C  
Typical Thermal Resistance Junction to Ambient (Note 3)  
Typical Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJL  
20  
4.0  
Operating and Storage Temperature Range  
TJ, TSTG  
-50 to +150  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
3. Mounted on FR-4 PCB with 30mm x 30mm copper pad.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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