WTE
PO WER SEMICONDUCTORS
P600A – P600M
6.0A SILICON RECTIFIER
Features
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Diffused Junction
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Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
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Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
P-600
Min
Dim
A
Max
—
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25.4
8.60
1.20
8.60
B
9.10
1.30
9.10
C
Marking: Type Number
Epoxy: UL 94V-O rate flame retardant
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol P600A P600B P600D P600G P600J P600K P600M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
6.0
V
A
Average Rectified Output Current
(Note 1)
@TA = 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
400
1.0
A
V
Forward Voltage
@IF = 6.0A
VFM
IRM
Cj
Peak Reverse Current
@TA = 25°C
5.0
1.0
µA
mA
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 2)
150
20
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RꢀJA
K/W
Operating Temperature Range
Storage Temperature Range
Tj
-50 to +150
-50 to +150
°C
°C
TSTG
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
P600A – P600M
1 of 3
© 2002 Won-Top Electronics