Datasheet > P600B(G)

P600B(G)

更新时间： 2023-12-06 20:03:28

品牌	Logo	应用领域
鲁光 - LGE		整流二极管普通整流二极管
页数	文件大小	规格书
2页	1041K
描述
普通整流二极管

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数据手册

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P600B(G) 数据手册

P600A-P600S

Plastic Silicon Rectifiers

VOLTAGE RANGE: 50 --- 1200 V

CURRENT: 6.0 A

R - 6

Features

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easilycleaned witn Freon,Alcohol,lsopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case:JEDEC R-6,molded plastic

Polarity: Color band denotes cathode

Weight: 0.072 ounces,2.04 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

P600 P600

P600 P600 P600 P600 P600 P600

UNITS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

MaximumDC blocking voltage

100

1000

1200

Maximumaverage forw ard rectified current

6.0

I_F(AV)

9.5mmlead length,

@T_A=60

Peak forw ard surge current

I_FSM

400

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximuminstantaneous forw ard voltage

@ 6.0 A

0.9

1.0

V_F

I_R

Maximumreverse current

@T_A=25

5.0

1000

150

at rated DC blocking voltage @T_A=100

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

C_J

Operating junction temperature range

Storage temperature range

-55----+150

T_J

T_STG

NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance f rom junction to ambient.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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