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P600A-T3 PDF预览

P600A-T3

更新时间: 2024-02-03 15:58:19
品牌 Logo 应用领域
WTE /
页数 文件大小 规格书
3页 39K
描述
6.0A SILICON RECTIFIER

P600A-T3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC, P-600, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.31其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P600A-T3 数据手册

 浏览型号P600A-T3的Datasheet PDF文件第2页浏览型号P600A-T3的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
P600A – P600M  
6.0A SILICON RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: Molded Plastic  
D
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 2.1 grams (approx.)  
Mounting Position: Any  
P-600  
Min  
Dim  
A
Max  
!
!
!
!
!
25.4  
8.60  
1.20  
8.60  
B
9.10  
1.30  
9.10  
C
Marking: Type Number  
Epoxy: UL 94V-O rate flame retardant  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol P600A P600B P600D P600G P600J P600K P600M  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
6.0  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 60°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
400  
1.0  
A
V
Forward Voltage  
@IF = 6.0A  
VFM  
IRM  
Cj  
Peak Reverse Current  
@TA = 25°C  
5.0  
1.0  
µA  
mA  
At Rated DC Blocking Voltage @TA = 100°C  
Typical Junction Capacitance (Note 2)  
150  
20  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
RJA  
K/W  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-50 to +150  
-50 to +150  
°C  
°C  
TSTG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
P600A – P600M  
1 of 3  
© 2002 Won-Top Electronics  

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