DATA SHEET
SEMICONDUCTOR
P4SMFJ Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 5.0 to 188 Volts 400 Watt Peak Power Pulse
SMF
Unit:inch(mm)
FEATURES
‧ For surface mounted applications in order to optimize board space.
‧ Low profile package
0.141(3.60)
‧ Built-in strain relief
0.126(3.20)
‧ Glass passivated junction
‧ Excellent clamping capability
‧ Low inductance
‧ Fast response time: typically less than 1.0 ps from 0 volts to BV min
‧ Typical IR less than 1µA above 10V
0.052(1.30)
0.043(1.10)
‧ High temperature soldering : 250°C/10 seconds at terminals.
‧ Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS
0.189(4.80)
0.173(4.40)
environment substance directive request
MSL:Level 1
MECHANICAL DATA
0.195(0.90)TYPICAL
‧ Case: JEDEC DO-214AC low profile molded plastic
‧ Terminals: Solder leads, solderable per MIL-STD-750, Method 2026
‧ Polarity: Indicated by cathode band except Bi-directional types.
‧ Standard Packageing: 12mm tape per(EIA-481)
‧ Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
RATING
Peak Power Dissipation at TA=25°C, TP=1ms(Note 1,2,5)Fig.1
Peak Forward Surge Current, per Figure 5(Note 3)
Peak Pulse Current Current on 10/1000µs waveform(Note
1,2,5)Fig.2
SYMBOL
PPPM
VALUE
Minimum 400
40.0
UNITS
Watts
Amps
IFSM
IPPM
See Table 1
Amps
Steady State Power Dissipation(Note 4)
Operating and Storage Temperature Range
NOTES:
PM(AV)
1.0
Watts
°C
TJ, TSTG
-55 to +150
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25°Cper Fig. 2.
2.Mounted on 5.0mm2 Copper pads to each terminal.
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
4.lead temperature at 75°C=TL.
5.Peak pluse power waveformis 10/1000µS.
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REV.02 20120403