P4SMA Series
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional 400
W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
(300 W above 91 V)
DO-214AC (SMA)
• Excellent clamping capability
• Very fast response time
PRIMARY CHARACTERISTICS
• Low incremental surge resistance
VWM
5.8 V to 459 V
6.45 V to 567 V
6.45 V to 231 V
400 W, 300 W
3.3 W
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
V
BR uni-directional
V
BR bi-directional
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PPPM
PD
I
FSM (uni-directional only)
40 A
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
DO-214AC (SMA)
Package
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. P4SMA10CA).
Electrical characteristics apply in both directions.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink, TA = 50 °C
PPPM
IPPM
PD
400
W
A
See next table
3.3
40
W
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
Operating junction and storage temperature range
TJ, TSTG
-65 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2, rating is 300 W above 91 V
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 06-Feb-15
Document Number: 89276
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000