Datasheet > P4SMA11A

P4SMA11A

更新时间： 2024-11-27 05:59:03

品牌	Logo	应用领域
MDE		二极管光电二极管局域网
页数	文件大小	规格书
3页	119K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P4SMA11A 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.79

P4SMA11A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

P4SMA SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-6.8 TO 550 Volts

400 Watt Peak Pulse Power

FEATURES

• For surface mounted applications in order to

optimize board space

• Glass passivated junction

• Built-in strain relief

• Excellent clamping capability

• Low profile package

• Low inductance

• Excellent clamping capability

• Fast response time: typically less than

1.0 ps from 0 volts to BV min

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AC Molded plastic

Terminal： Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Standard Packaging: 12mm tape(EIA STD RS-481)

Weight: 0.002 ounces, 0.061 grams

Dimensions in inches (millimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use CA Suffix for types P4SMA6.8CA thru types P4SMA550CA

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

P_PPM

VALUE

Minimum 400

SEE TABLE 1

UNITS

Watts

Amps

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms (Note 1)

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

Lead lengths .375", 9.5mm (Note 2)

P_M

1.0

Watts

(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

Operatings and Storage Temperature Range

NOTES:

Amps

°C

I_FSM

T_J, T_STG

-55 +150

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on 5.0mm²(0.03mm thick) Copper Pads to each termina

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

下载PDF

与P4SMA11A相关器件

型号	品牌	获取价格	描述	数据表
P4SMA11A/51	VISHAY	获取价格	Transient Suppressor,
P4SMA11A/51-E3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient
P4SMA11A/61	VISHAY	获取价格	Transient Suppressor,
P4SMA11A-51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P4SMA11A5A-E3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient
P4SMA11A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P4SMA11A-AT/TR7	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P4SMA11A-AU	PANJIT	获取价格	SMA
P4SMA11ABK	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,
P4SMA11ABKTIN/LEAD	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,

与P4SMA11A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

60

产品中心

服务支持

精选活动

关于我们

帮助中心

P4SMA11A

P4SMA11A 技术参数

P4SMA11A 数据手册

与P4SMA11A相关器件

与P4SMA11A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4SMA11A

P4SMA11A 技术参数

P4SMA11A 数据手册

与P4SMA11A相关器件

与P4SMA11A相关文章

您还可以找

您在本页遇到什么问题？