Datasheet > P4KE530, P4KE550

P4KE530, P4KE550

更新时间： 2024-11-07 14:54:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	66K
描述
TransZorb? Transient Voltage Suppressors

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P4KE530, P4KE550 数据手册

P4KE530, P4KE550

Vishay General Semiconductor

www.vishay.com

TRANSZORB Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in unidirectional only

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-41 (DO-204AL)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

PRIMARY CHARACTERISTICS

V_WM

_BRunidirectional

P_PPM

477 V, 495 V

530 V, 550 V

300 W

MECHANICAL DATA

P_D

1.0 W

Case: DO-41 (DO-204L), molded epoxy over passivated

chip

V_C

760 A

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant and commercial grade

T_Jmax.

Polarity

Package

150 °C

Unidirectional

DO-41 (DO-204AL)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P4KE530

P4KE550

UNIT

Peak pulse power dissipation ⁽¹⁾⁽²⁾(fig.1)

Power dissipation on infinite heatsink at T_L= 75 °C (fig. 4)

Operating junction and storage temperature range

P_PPM

P_D

300

1.0

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Peak pulse power waveform is 10/1000 μs

(2)

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

BREAKDOWN VOLTAGE

TEST CURRENT

STAND-OFF VOLTAGE

_BRAT I_T

(V)

DEVICE TYPE

I_T

V_WM

(V)

(μA)

MIN.

530

P4KE530

P4KE550

100

477

495

550

ADDITIONAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

400 mA, 10/1000 μs waveform

at V_WM

SYMBOL

P4KE530

P4KE550

UNIT

Max. clamping voltage

V_C

I_D

760

Maximum DC reverse leakage current

Typical temperature coefficient

1.0

650

μA

of V_BR

mV/°C

1 MHz, V_R= 0 V

1 MHz, V_R= 200 V

C_J

Typical capacitance

7.5

Revision: 16-Sep-2021

Document Number: 88366

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与P4KE530, P4KE550相关器件

型号	品牌	获取价格	描述	数据表
P4KE53051	VISHAY	获取价格	300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN
P4KE53054	VISHAY	获取价格	300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN
P4KE530-54	VISHAY	获取价格	300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN
P4KE530A	LITTELFUSE	获取价格	Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
P4KE530A	GOOD-ARK	获取价格	Transient Voltage Suppressors
P4KE530A	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
P4KE530A	dowosemi	获取价格	瞬态电压抑制器
P4KE530A	MCC	获取价格	Tape : 5K/Reel, 20K/Ctn; Bulk: 1K/Box, 50K/Ctn; T/B: 5K/Ammo Box, 50K/Ctn.;
P4KE530A	YAGEO	获取价格	瞬态抑制二极管 (一般)
P4KE530A/B	YAGEO	获取价格	Trans Voltage Suppressor Diode,

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