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P4KE500CA-HF PDF预览

P4KE500CA-HF

更新时间: 2024-11-21 20:10:39
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 100K
描述
Trans Voltage Suppressor Diode,

P4KE500CA-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.7
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P4KE500CA-HF 数据手册

 浏览型号P4KE500CA-HF的Datasheet PDF文件第2页浏览型号P4KE500CA-HF的Datasheet PDF文件第3页浏览型号P4KE500CA-HF的Datasheet PDF文件第4页 
400W Transient Voltage Suppressor  
P4KE-HF Series  
Breakdown Voltage: 6.8 to 600 Volts  
Peak Pulse Power: 400 Watts  
RoHS Device  
Halogen Free  
DO-41  
Features  
- Glass passivated chip.  
- 400W peak pulse power capability with a 10/1000µs  
waveform, repetitive rate (duty cycle):0.01%  
- Low leakage.  
1.000(25.40) Min.  
- Uni and Bidirectional unit.  
- Excellent clamping capability.  
0.205(5.21)  
0.161(4.10)  
- Very fast response time.  
- UL recognized file # E349157  
- Range: P4KE6.8(C)A thru. P4KE33(C)A  
R
0.117(2.97) DIA.  
0.078(2.00) DIA.  
Mechanical Data  
1.000(25.40) Min.  
- Case: Molded plastic, DO-41  
- Epoxy: UL 94V-0 rate flame retardant.  
0.035(0.90) DIA.  
0.027(0.70) DIA.  
- Lead: Solderable per MIL-STD-202,  
method 208 guranteed.  
- Polarity: Color band denotes cathode end  
except bipolar.  
Dimensions in inches and (millimeter)  
- Monuting position: Any.  
- Weight: 0.321 grams(approx.)  
Maximum Ratings (TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
W
400  
Peak pulse current with a 10/1000μs waveform  
(Note 1)  
IPP  
PD  
See Next Table  
1.0  
A
Power dissipation on infinite heatsink at TL=75°C  
W
Peak forward surge current, 8.3ms single  
half sine-wave unidirectional only  
(Note 2)  
IFSM  
40  
A
Maximum instantaneous forward voltage at  
25 A for unidirectional only (Note 3)  
VF  
3.5/5.0  
V
Operating junction and storage  
temperature range  
TJ, TSTG  
-55 to +150  
°C  
NTOES:  
(1) Non-repetitive current pulse per fig.5 and derated above TA=25°C per fig.1  
(2) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:C  
Page 1  
QW-JTV11  
Comchip Technology CO., LTD.  

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