5秒后页面跳转
P4KE500C-G PDF预览

P4KE500C-G

更新时间: 2024-09-23 12:20:47
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
6页 131K
描述
400W Transient Voltage Suppressor

P4KE500C-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
击穿电压标称值:500 V最大钳位电压:720 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
极性:BIDIRECTIONAL最大重复峰值反向电压:406 V
子类别:Transient Suppressors表面贴装:NO
端子面层:Tin (Sn)Base Number Matches:1

P4KE500C-G 数据手册

 浏览型号P4KE500C-G的Datasheet PDF文件第2页浏览型号P4KE500C-G的Datasheet PDF文件第3页浏览型号P4KE500C-G的Datasheet PDF文件第4页浏览型号P4KE500C-G的Datasheet PDF文件第5页浏览型号P4KE500C-G的Datasheet PDF文件第6页 
400W Transient Voltage Suppressor  
P4KE-G Series  
Stand-off Voltage: 6.8 ~ 600V  
Power Dissipation: 400 Watts  
RoHS Device  
DO-41  
Features  
-Glass passivated chip  
-Low leakage  
-Uni and Bidirection unit  
0.033(0.84)  
0.028(0.71)  
DIA.  
1.000(25.40)  
MIN.  
-Excellent clamping capability  
-The plastic material has UL recognition 94V-0  
-Fast response time: typically less than 1.0pS from  
0 volts to BV min  
0.205(5.21)  
0.165(4.19)  
0.117(2.97)  
0.090(2.29)  
DIA.  
Mechanical Data  
-Case: Molded plastic DO-41  
1.000(25.40)  
MIN.  
-Polarity: By cathode band denotes unidirectional  
device none cathode band denoted bi-directional  
device  
-Weight: 0.34 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbol  
Parameter  
Value  
Unit  
W
Peak power dissipation a 10/1000μs waveform  
PPP  
400  
(Note 1)  
Peak pulse current with a 10/1000μs waveform  
IPP  
PD  
See Next Table  
1.0  
A
(Note 1)  
O
W
C
Power dissipation on infinite heatsink at TL=75  
Peak forward surge current, 8.3mS single  
half sine-wave unidirectional only(Note 2)  
IFSM  
VF  
40  
A
V
Maximum instantaneous forward voltage  
at 25A for unidirectional only (Note 3)  
3.5/5.0  
Operating junction and storage temperature  
range  
OC  
TJ, TSTG  
-55 to +150  
NTOES:  
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 OC per fig. 1.  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.  
REV:B  
Page 1  
QW-BTV05  

与P4KE500C-G相关器件

型号 品牌 获取价格 描述 数据表
P4KE500C-T3 WTE

获取价格

Trans Voltage Suppressor Diode, 400W, 406V V(RWM), Bidirectional, 1 Element, Silicon, DO-4
P4KE500-G COMCHIP

获取价格

400W Transient Voltage Suppressor
P4KE500-LF WTE

获取价格

Trans Voltage Suppressor Diode, 400W, 406V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P4KE500-T3-LF WTE

获取价格

Trans Voltage Suppressor Diode, 400W, 406V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P4KE500-TB WTE

获取价格

Trans Voltage Suppressor Diode, 400W, 406V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P4KE51 TRSYS

获取价格

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
P4KE51 DIOTEC

获取价格

Unidirectional and bidirectional Transient Voltage Suppressor Diodes
P4KE51 SEMIKRON

获取价格

Unidirectional and bidirectional Transient Voltage Suppressor diodes
P4KE51 COMCHIP

获取价格

400W Transient Voltage Suppressor
P4KE51 TSC

获取价格

Transient Voltage Suppressor Diodes