P4KE10A-B

更新时间： 2024-11-12 05:58:59

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
5页	140K
描述
Transient Voltage Suppression Diodes

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中文翻译

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数据手册
替代型号

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P4KE10A-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 400W > P4KE series

RoHS

P4KE Series

Description

The P4KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

tꢀ)BMPHFOꢁ'SFF

tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ

resistance

tꢀ 3P)4ꢀDPNQMJBOU

tꢀ 5ZQJDBMꢀ*_Rless than 1μA

above 13V

tꢀ 5ZQJDBMꢀNBYJNVNꢀ

temperature coefﬁcient

ΔV_BR= 0.1% x V_BR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ

soldering guaranteed:

Agency Approvals

tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ

Underwriters Laboratory

Flammability classiﬁcation

94V-O

junction in DO-41 Package

AGENCY

AGENCY FILE NUMBER

E230531

tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀ

capability at 10×1000μs

waveform, repetition rate

(duty cycles):0.01%

tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ

typically less than 1.0ps

from 0 Volts to BV min

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE

tꢀ &YDFMMFOUꢀDMBNQJOHꢀ

capability

Parameter

Symbol

P_PPM

Value

400

Unit

Peak Pulse Power Dissipation by

10x1000μs test waveform (Fig.1)

(Note 1)

Steady State Power Dissipation on

iniﬁnite heat sink atT_L=75ºC (Fig. 5)

Applications

P_D

1.5

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

only (Note 2)

Maximum Instantaneous Forward

Voltage at 25A for Unidirectional

only (Note 3)

I_FSM

computer, industrial and consumer electronic applications.

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

T , T_STG-55 to 175

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

100

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated aboveT_A= 25^OC per Fig. 2.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Revision: January 09, 2009

P4KE Series

Speciﬁcations are subject to change without notice.

Please refer to http://www.Littelfuse.com/series/P4KE.html for current information.

12 3 4 5

中文翻译

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P4KE10A-B 替代型号

型号	品牌	替代类型	描述	数据表
P4KE10AHE3/54	VISHAY	功能相似	TVS DIODE 8.55V 14.5V DO204AL
P4KE10A-E3/54	VISHAY	功能相似	TVS DIODE 8.55V 14.5V DO204AL

与P4KE10A-B相关器件

型号	品牌	获取价格	描述	数据表
P4KE10A-BP	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE10A-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE10A-C	SECOS	获取价格	400 Peak Power
P4KE10AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE10A-E3/54	VISHAY	获取价格	TVS DIODE 8.55V 14.5V DO204AL
P4KE10A-E3/73	VISHAY	获取价格	TVS DIODE 8.55V 14.5V DO204AL
P4KE10A-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE10A-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE10AH01	RECTRON	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE10AH02	RECTRON	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41

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