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P4KE100CHE3/54

更新时间： 2024-01-02 04:54:46
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 91K
描述
Trans Voltage Suppressor Diode, 81V V(RWM), Bidirectional,

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P4KE100CHE3/54 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.82
击穿电压标称值：100 V最大钳位电压：144 V
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码：e3
极性：BIDIRECTIONAL最大重复峰值反向电压：81 V
子类别：Transient Suppressors表面贴装：NO
端子面层：Matte Tin (Sn)Base Number Matches：1

P4KE100CHE3/54 数据手册

 浏览型号P4KE100CHE3/54的Datasheet PDF文件第2页浏览型号P4KE100CHE3/54的Datasheet PDF文件第3页浏览型号P4KE100CHE3/54的Datasheet PDF文件第4页浏览型号P4KE100CHE3/54的Datasheet PDF文件第5页 
P4KE6.8A thru P4KE540A  
Vishay General Semiconductor  
www.vishay.com  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
DO-204AL (DO-41)  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.8 V to 459 V  
6.8 V to 540 V  
6.8 V to 440 V  
400 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
V
BR uni-directional  
V
BR bi-directional  
PPPM  
PD  
1.5 W  
MECHANICAL DATA  
IFSM (uni-directional only)  
TJ max.  
40 A  
Case: DO-204AL, molded epoxy body over passivated chip  
Molding compound meets UL 94 V-0 flammability rating  
175 °C  
Polarity  
Uni-directional, bi-directional  
DO-204AL (DO-41)  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
Note  
•
For bi-directional types, use CA suffix (e.g. P4KE440CA).  
Electrical characteristics apply in both directions.  
P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for  
commercial grade only  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
400  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig.1)  
Peak pulse current with a 10/1000 μs waveform (1)  
See next table  
1.5  
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half-sine wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)  
Operating junction and storage temperature range  
PD  
W
IFSM  
40  
A
VF  
3.5/5.0  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
VF = 3.5 V for P4KE220A and below; VF = 5.0 V for P4KE250A and above  
(2)  
(3)  
Revision: 18-Sep-12  
Document Number: 88365  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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