5秒后页面跳转
P4C164-35FILF PDF预览

P4C164-35FILF

更新时间: 2024-11-25 03:36:55
品牌 Logo 应用领域
PYRAMID /
页数 文件大小 规格书
16页 182K
描述
ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

P4C164-35FILF 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DFP包装说明:DFP,
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.01最长访问时间:35 ns
JESD-30 代码:R-CDFP-F28内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:2.286 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9.017 mm
Base Number Matches:1

P4C164-35FILF 数据手册

 浏览型号P4C164-35FILF的Datasheet PDF文件第2页浏览型号P4C164-35FILF的Datasheet PDF文件第3页浏览型号P4C164-35FILF的Datasheet PDF文件第4页浏览型号P4C164-35FILF的Datasheet PDF文件第5页浏览型号P4C164-35FILF的Datasheet PDF文件第6页浏览型号P4C164-35FILF的Datasheet PDF文件第7页 
P4C164  
ULTRA HIGH SPEED 8K x 8  
STATIC CMOS RAMS  
FEATURES  
Common Data I/O  
Full CMOS, 6T Cell  
Fully TTL Compatible Inputs and Outputs  
High Speed (Equal Access and Cycle Times)  
– 8/10/12/15/20/25/35/70/100 ns (Commercial)  
– 10/12/15/20/25/35/70/100 ns(Industrial)  
12/15/20/25/35/45/70/100ns(Military)  
StandardPinout(JEDECApproved)  
– 28-Pin 300 mil Plastic DIP, SOJ  
– 28-Pin 600 mil Plastic DIP (70 & 100ns)  
– 28-Pin 300 mil SOP (70 & 100ns)  
– 28-Pin 300 mil Ceramic DIP  
– 28-Pin 600 mil Ceramic DIP  
– 28-Pin 350 x 550 mil LCC  
Low Power Operation  
Output Enable and Dual Chip Enable Control  
Functions  
– 32-Pin 450 x 550 mil LCC  
28-PinCERPACK  
Single 5V±10% Power Supply  
Data Retention with 2.0V Supply, 10 µA Typical  
Current(P4C164LMilitary)  
DESCRIPTION  
Access times as fast as 8 nanoseconds are available,  
permitting greatly enhanced system operating speeds.  
The P4C164 is a 65,536-bit ultra high-speed static RAM  
organized as 8K x 8. The CMOS memory requires no  
clocks or refreshing and has equal access and cycle  
times.InputsarefullyTTL-compatible. TheRAMoperates  
from a single 5V±10% tolerance power supply. With  
battery backup, data integrity is maintained with supply  
voltages down to 2.0V. Current drain is typically 10 µA  
from a 2.0V supply.  
TheP4C164isavailablein28-pin300milDIPandSOJ,28-  
pin 600 mil plastic and ceramic DIP, 28-pin 350 x 550 mil  
LCC, 32-pin 450 x 550 mil LCC, and 28-pin CERPACK.  
The70nsand100nsP4C164sareavailableinthe600mil  
plastic DIP.  
PIN CONFIGURATIONS  
FUNCTIONAL BLOCK DIAGRAM  
DIP (P5, P6, C5, C5-1, D5-1, D5-2),  
SOJ (J5), CERPACK (F4), SOP(S6)  
SEE PAGE 7 FOR LCC PIN CONFIGURATIONS  
Document # SRAM115 REV F  
Revised June 2007  
1

与P4C164-35FILF相关器件

型号 品牌 获取价格 描述 数据表
P4C164-35FM PYRAMID

获取价格

暂无描述
P4C164-35FMB PYRAMID

获取价格

暂无描述
P4C164-35FMBLF PYRAMID

获取价格

ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
P4C164-35FMLF PYRAMID

获取价格

ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
P4C164-35FSC PYRAMID

获取价格

Standard SRAM
P4C164-35FSCLF PYRAMID

获取价格

Standard SRAM
P4C164-35FSI PYRAMID

获取价格

Standard SRAM
P4C164-35FSILF PYRAMID

获取价格

Standard SRAM
P4C164-35JC PYRAMID

获取价格

Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
P4C164-35JCLF PYRAMID

获取价格

ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS