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P4C164-20JCLF PDF预览

P4C164-20JCLF

更新时间: 2024-10-26 03:45:39
品牌 Logo 应用领域
PYRAMID 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
16页 182K
描述
ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

P4C164-20JCLF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ, SOJ28,.34针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5
Is Samacsys:N最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J28
JESD-609代码:e3长度:18.161 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ28,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:3.7592 mm
最大待机电流:0.015 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.155 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.5184 mm
Base Number Matches:1

P4C164-20JCLF 数据手册

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P4C164  
ULTRA HIGH SPEED 8K x 8  
STATIC CMOS RAMS  
FEATURES  
Common Data I/O  
Full CMOS, 6T Cell  
Fully TTL Compatible Inputs and Outputs  
High Speed (Equal Access and Cycle Times)  
– 8/10/12/15/20/25/35/70/100 ns (Commercial)  
– 10/12/15/20/25/35/70/100 ns(Industrial)  
12/15/20/25/35/45/70/100ns(Military)  
StandardPinout(JEDECApproved)  
– 28-Pin 300 mil Plastic DIP, SOJ  
– 28-Pin 600 mil Plastic DIP (70 & 100ns)  
– 28-Pin 300 mil SOP (70 & 100ns)  
– 28-Pin 300 mil Ceramic DIP  
– 28-Pin 600 mil Ceramic DIP  
– 28-Pin 350 x 550 mil LCC  
Low Power Operation  
Output Enable and Dual Chip Enable Control  
Functions  
– 32-Pin 450 x 550 mil LCC  
28-PinCERPACK  
Single 5V±10% Power Supply  
Data Retention with 2.0V Supply, 10 µA Typical  
Current(P4C164LMilitary)  
DESCRIPTION  
Access times as fast as 8 nanoseconds are available,  
permitting greatly enhanced system operating speeds.  
The P4C164 is a 65,536-bit ultra high-speed static RAM  
organized as 8K x 8. The CMOS memory requires no  
clocks or refreshing and has equal access and cycle  
times.InputsarefullyTTL-compatible. TheRAMoperates  
from a single 5V±10% tolerance power supply. With  
battery backup, data integrity is maintained with supply  
voltages down to 2.0V. Current drain is typically 10 µA  
from a 2.0V supply.  
TheP4C164isavailablein28-pin300milDIPandSOJ,28-  
pin 600 mil plastic and ceramic DIP, 28-pin 350 x 550 mil  
LCC, 32-pin 450 x 550 mil LCC, and 28-pin CERPACK.  
The70nsand100nsP4C164sareavailableinthe600mil  
plastic DIP.  
PIN CONFIGURATIONS  
FUNCTIONAL BLOCK DIAGRAM  
DIP (P5, P6, C5, C5-1, D5-1, D5-2),  
SOJ (J5), CERPACK (F4), SOP(S6)  
SEE PAGE 7 FOR LCC PIN CONFIGURATIONS  
Document # SRAM115 REV F  
Revised June 2007  
1

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