5秒后页面跳转
P4C1256L-25CMBLF PDF预览

P4C1256L-25CMBLF

更新时间: 2024-01-20 14:55:34
品牌 Logo 应用领域
PYRAMID 存储内存集成电路静态存储器
页数 文件大小 规格书
17页 170K
描述
HIGH SPEED 32K x 8 STATIC CMOS RAM

P4C1256L-25CMBLF 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOIC包装说明:SOP,
针数:28Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.56Is Samacsys:N
最长访问时间:25 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:17.8816 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:2.6416 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.493 mmBase Number Matches:1

P4C1256L-25CMBLF 数据手册

 浏览型号P4C1256L-25CMBLF的Datasheet PDF文件第2页浏览型号P4C1256L-25CMBLF的Datasheet PDF文件第3页浏览型号P4C1256L-25CMBLF的Datasheet PDF文件第4页浏览型号P4C1256L-25CMBLF的Datasheet PDF文件第5页浏览型号P4C1256L-25CMBLF的Datasheet PDF文件第6页浏览型号P4C1256L-25CMBLF的Datasheet PDF文件第7页 
P4C1256  
HIGH SPEED 32K x 8  
STATIC CMOS RAM  
FEATURES  
Fully TTL Compatible Inputs and Outputs  
Advanced CMOS Technology  
Fast tOE  
Automatic Power Down  
Packages  
High Speed (Equal Access and Cycle Times)  
— 12/15/20/25/35 ns (Commercial)  
— 15/20/25/35/45 ns (Industrial)  
— 20/25/35/45/55/70 ns (Military)  
Low Power  
—28-Pin 300 mil DIP, SOJ, TSOP  
—28-Pin 300 mil Ceramic DIP  
—28-Pin 600 mil Ceramic DIP  
—28-Pin CERPACK  
—28-Pin SOP  
—28-Pin LCC (350 mil x 550 mil)  
—32-Pin LCC (450 mil x 550 mil)  
Single 5V±10% Power Supply  
Easy Memory Expansion Using CE and OE  
Inputs  
Common Data I/O  
Three-State Outputs  
DESCRIPTION  
The P4C1256 device provides asynchronous operation  
with matching access and cycle times. Memory loca-  
tions are specified on address pins A0 to A14. Reading  
is accomplished by device selection (CE and output  
enabling (OE) while write enable (WE) remains HIGH.  
By presenting the address under these conditions, the  
data in the addressed memory location is presented on  
the data input/output pins. The input/output pins stay  
in the HIGH Z state when either CE or OE is HIGH or  
WE is LOW.  
The P4C1256 is a 262,144-bit high-speed CMOS  
static RAM organized as 32Kx8. The CMOS memory  
requires no clocks or refreshing, and has equal access  
and cycle times. Inputs are fully TTL-compatible. The  
RAM operates from a single 5V±10% tolerance power  
supply.  
Access times as fast as 12 nanoseconds permit greatly  
enhanced system operating speeds. CMOS is utilized  
to reduce power consumption to a low level. The  
P4C1256 is a member of a family of PACE RAM™ prod-  
ucts offering fast access times.  
Package options for the P4C1256 include 28-pin 300  
mil DIP, SOJ and TSOP packages. For military tempera-  
ture range, Ceramic DIP and LCC packages are avail-  
able.  
PIN CONFIGURATIONS  
FUNCTIONAL BLOCK DIAGRAM  
DIP (P5, C5, C5-1, D5-2), SOJ (J5), SOP (S11-1, S11-3)  
CERPACK (F4) SIMILAR  
See end of datasheet for LCC and TSOP  
pin configurations.  
Document # SRAM119 REV G  
Revised June 2007  
1

与P4C1256L-25CMBLF相关器件

型号 品牌 描述 获取价格 数据表
P4C1256L-25CMLF PYRAMID Standard SRAM, 32KX8, 25ns, CMOS, CDIP28, 0.300 INCH, ROHS COMPLIANT, CERAMIC, SIDE BRAZED

获取价格

P4C1256L-25CWILF PYRAMID Standard SRAM, 32KX8, 25ns, CMOS, CDIP28, 0.600 INCH, ROHS COMPLIANT, CERAMIC, SIDE BRAZED

获取价格

P4C1256L-25CWMB PYRAMID Standard SRAM, 32KX8, 25ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, SIDE BRAZED, DIP-28

获取价格

P4C1256L-25DI PYRAMID Standard SRAM, 32KX8, 25ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28

获取价格

P4C1256L-25DILF PYRAMID Standard SRAM, 32KX8, 25ns, CMOS, CDIP28, 0.600 INCH, ROHS COMPLIANT, CERAMIC, DIP-28

获取价格

P4C1256L-25DMBLF PYRAMID HIGH SPEED 32K x 8 STATIC CMOS RAM

获取价格