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P4C1256L-20L32MLF PDF预览

P4C1256L-20L32MLF

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
PYRAMID 静态存储器
页数 文件大小 规格书
16页 1155K
描述
Standard SRAM, 32KX8, 20ns, CMOS, 0.450 X 0.550 INCH, ROHS COMPLIANT, LCC-32

P4C1256L-20L32MLF 数据手册

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P4C1256  
HIGH SPEED 32K x 8  
STATIC CMOS RAM  
FEATURES  
High Speed (Equal Access and Cycle Times)  
– 12/15/20/25/35 ns (Commercial)  
– 15/20/25/35/45 ns (Industrial)  
– 20/25/35/45/55/70 ns (Military)  
Low Power  
Single 5V±10% Power Supply  
Easy Memory Expansion Using CE and OE Inputs  
Common Data I/O  
Fast tOE  
Automatic Power Down  
Packages  
– 28-Pin 300 mil DIP, SOJ, TSOP  
– 28-Pin 300 mil Ceramic DIP  
– 28-Pin 600 mil Plastic and Ceramic DIP  
– 28-Pin CERPACK  
– 28-Pin Solder Seal Flat Pack  
– 28-Pin SOP  
Three-State Outputs  
Fully TTL Compatible Inputs and Outputs  
Advanced CMOS Technology  
– 28-Pin LCC (350 mil x 550 mil)  
– 32-Pin LCC (450 mil x 550 mil)  
DESCRIPTIOꢀ  
The P4C1256 is a 262,144-bit high-speed CMOS static  
RAM organized as 32K x 8. The CMOS memory requires  
no clocks or refreshing, and has equal access and cycle  
times. InputsarefullyTTL-compatible. TheRAMoperates  
from a single 5V±10% tolerance power supply.  
with matching access and cycle times. Memory locations  
are specified on address pinsA0 toA14. Reading is accom-  
plished by device selection (CE) and output enabling (OE)  
while write enable (WE) remains HIGH. By presenting the  
address under these conditions, the data in the addressed  
memorylocationispresentedonthedatainput/outputpins.  
The input/output pins stay in the HIGH Z state when either  
CE or OE is HIGH or WE is LOW.  
Access times as fast as 12 nanoseconds permit greatly  
enhanced system operating speeds. CMOS is utilized to  
reduce power consumption to a low level. The P4C1256  
is a member of a family of PACE RAM™ products offering  
fast access times.  
PackageoptionsfortheP4C1256include28-pinDIP,SOJ,  
and TSOP packages. For military temperature range,  
Ceramic DIP and LCC packages are available.  
The P4C1256 devices provides asynchronous operation  
FUꢀCTIOꢀAL BLOCK DIAꢁRAM  
PIꢀ COꢀFIꢁURATIOꢀS  
DIP (P5, P6, C5, C5-1, D5-1, D5-2), SOJ (J5), SOP (S11-1, S11-3)  
CERPACK (F4, FS-5) SIMILAR  
LCC and TSOP configurations at end of datasheet  
Document # SRAM119 REV I  
Revised July 2010  

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