Datasheet > P4C1256-35SSMBLF

P4C1256-35SSMBLF

更新时间： 2024-11-13 05:51:11

品牌	Logo	应用领域
PYRAMID		静态存储器光电二极管
页数	文件大小	规格书
16页	1155K
描述
Standard SRAM, 32KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-28

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P4C1256-35SSMBLF 数据手册

P4C1256

HIGH SPEED 32K x 8

STATIC CMOS RAM

FEATURES

High Speed (Equal Access and Cycle Times)

– 12/15/20/25/35 ns (Commercial)

– 15/20/25/35/45 ns (Industrial)

– 20/25/35/45/55/70 ns (Military)

Low Power

Single 5V±10% Power Supply

Easy Memory Expansion Using CE and OE Inputs

Common Data I/O

Fast t_OE

Automatic Power Down

Packages

– 28-Pin 300 mil DIP, SOJ, TSOP

– 28-Pin 300 mil Ceramic DIP

– 28-Pin 600 mil Plastic and Ceramic DIP

– 28-Pin CERPACK

– 28-Pin Solder Seal Flat Pack

– 28-Pin SOP

Three-State Outputs

Fully TTL Compatible Inputs and Outputs

ꢀ Advanced CMOS Technology

– 28-Pin LCC (350 mil x 550 mil)

– 32-Pin LCC (450 mil x 550 mil)

DESCRIPTIOꢀ

The P4C1256 is a 262,144-bit high-speed CMOS static

RAM organized as 32K x 8. The CMOS memory requires

no clocks or refreshing, and has equal access and cycle

times. InputsarefullyTTL-compatible. TheRAMoperates

from a single 5V±10% tolerance power supply.

with matching access and cycle times. Memory locations

are speciﬁed on address pinsA₀toA₁₄. Reading is accom-

plished by device selection (CE) and output enabling (OE)

while write enable (WE) remains HIGH. By presenting the

address under these conditions, the data in the addressed

memorylocationispresentedonthedatainput/outputpins.

The input/output pins stay in the HIGH Z state when either

CE or OE is HIGH or WE is LOW.

Access times as fast as 12 nanoseconds permit greatly

enhanced system operating speeds. CMOS is utilized to

reduce power consumption to a low level. The P4C1256

is a member of a family of PACE RAM™ products offering

fast access times.

PackageoptionsfortheP4C1256include28-pinDIP,SOJ,

and TSOP packages. For military temperature range,

Ceramic DIP and LCC packages are available.

The P4C1256 devices provides asynchronous operation

FUꢀCTIOꢀAL BLOCK DIAꢁRAM

PIꢀ COꢀFIꢁURATIOꢀS

DIP (P5, P6, C5, C5-1, D5-1, D5-2), SOJ (J5), SOP (S11-1, S11-3)

CERPACK (F4, FS-5) SIMILAR

LCC and TSOP conﬁgurations at end of datasheet

Document # SRAM119 REV I

Revised July 2010

12 3 4 5 6 7...16

中文翻译

下载PDF

与P4C1256-35SSMBLF相关器件

型号	品牌	获取价格	描述	数据表
P4C1256-35SSMLF	PYRAMID	获取价格	Standard SRAM, 32KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-28
P4C1256-35TCLF	PYRAMID	获取价格	HIGH SPEED 32K x 8 STATIC CMOS RAM
P4C1256-35TI	PYRAMID	获取价格	暂无描述
P4C1256-35TILF	PYRAMID	获取价格	HIGH SPEED 32K x 8 STATIC CMOS RAM
P4C1256-35TM	PYRAMID	获取价格	Standard SRAM, 32KX8, 35ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP-28
P4C1256-35TMBLF	PYRAMID	获取价格	HIGH SPEED 32K x 8 STATIC CMOS RAM
P4C1256-35TMLF	PYRAMID	获取价格	HIGH SPEED 32K x 8 STATIC CMOS RAM
P4C1256-45CC	PYRAMID	获取价格	Standard SRAM, 32KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, SIDE BRAZED, DIP-28
P4C1256-45CCLF	PYRAMID	获取价格	HIGH SPEED 32K x 8 STATIC CMOS RAM
P4C1256-45CILF	PYRAMID	获取价格	HIGH SPEED 32K x 8 STATIC CMOS RAM

与P4C1256-35SSMBLF相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

P4C1256-35SSMBLF

P4C1256-35SSMBLF 数据手册

与P4C1256-35SSMBLF相关器件

与P4C1256-35SSMBLF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4C1256-35SSMBLF

P4C1256-35SSMBLF 数据手册

与P4C1256-35SSMBLF相关器件

与P4C1256-35SSMBLF相关文章

您还可以找

您在本页遇到什么问题？