Datasheet > P3710BT

P3710BT

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	185K
描述
TO-220

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中文翻译

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数据手册

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P3710BT 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P3710BT

NIKO-SEM

TO-220

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

31A

37mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

±20

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy²

I_DM

I_AS

E_AS

128

T_C= 25 °C

P_D

Power Dissipation

T_C= 100 °C

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

1.6

UNITS

°C / W

Junction-to-Case

R_JC

¹Pulse width limited by maximum junction temperature.

²Starting T_j=25 °C,L=1mH,V_DD=50V

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

_GS= 0V, I_D= 250A

1.3

1.8

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

V_DS= 80V, V_GS= 0V

±100 nA

Zero Gate Voltage Drain Current

I_DSS

A

V_DS=80V, V_GS=0V, T_J=125 °C

V_GS= 4.5V, I_D= 10A

R_DS(ON)

g_fs

mΩ

Drain-Source On-State

Resistance¹

V_GS= 10V, I_D= 10A

mΩ

Forward Transconductance¹

V_DS= 10V, I_D= 10A

H-21-5

REV 1.1

12 3 4

中文翻译

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