Datasheet > P2703BAG

P2703BAG

更新时间： 2024-10-27 04:00:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	226K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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P2703BAG 数据手册

P2703BAG

TSOP-6

N-Channel Logic Level Enhancement Mode

Field Effect Transistor_Preliminary

NIKO-SEM

Lead-Free

PRODUCT SUMMARY

1. GATE

2. DRAIN

3. SOURCE

V_(BR)DSS

R_DS(ON)

I_D

27mΩ

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

UNITS

V_GS

±20

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

I_D

T_C= 100 °C

I_DM

P_D

1.6

1.2

T_C= 25 °C

T_C= 100 °C

Operating Junction & Storage Temperature Range

Lead Temperature (¹/₁₆” from case for 10 sec.)

T_j, T_stg

T_L

-55 to 150

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

R_θJC

R_θJA

°C / W

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250µA

_DS= V_GS, I_D= 250µA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

1.5

V_DS= 0V, V_GS= ±20V

V_DS= 24V, V_GS= 0V

±100 nA

Zero Gate Voltage Drain Current

On-State Drain Current¹

I_DSS

µA

V_DS= 20V, V_GS= 0V, T_J= 125 °C

V_DS= 5V, V_GS= 10V

I_D(ON)

R_DS(ON)

g_fs

V_GS= 4.5V, I_D= 5A

Drain-Source On-State

Resistance¹

mΩ

V_GS= 10V, I_D= 7A

Forward Transconductance¹

V_DS= 5V, I_D= 7A

14.4

AUG-12-2005

12 3 4 5

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