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P2300ME

更新时间: 2024-02-20 12:30:49
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力特 - LITTELFUSE 触发装置硅浪涌保护器放大器电视有线电视双向触发二极管局域网
页数 文件大小 规格书
2页 127K
描述
CATV Line Amplifiers/Power Inserters ME SIDACtor Device

P2300ME 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SIP包装说明:IN-LINE, R-PSIP-T12
针数:12Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.25
Is Samacsys:N最大转折电压:260 V
配置:SEPARATE, 4 ELEMENTS最大断态直流电压:190 V
最大维持电流:150 mAJESD-30 代码:R-PSIP-T12
通态非重复峰值电流:50 A元件数量:4
端子数量:12最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
重复峰值反向电压:190 V子类别:Silicon Surge Protectors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

P2300ME 数据手册

 浏览型号P2300ME的Datasheet PDF文件第2页 
CATV Line Amplifiers/Power Inserters ME SIDACtor Device  
CATV Line Amplifiers/Power Inserters ME  
SIDACtor Device  
This SIDACtor device is a 5000 A solid state protection device offered in a non-isolated  
TO-218 package. It protects equipment located in the severe surge environment of CATV  
(Community Antenna TV) applications.  
1
2
In CATV line amplifiers and power inserters, this device can replace the gas tubes  
traditionally used for station protection because SIDACtor devices have much tighter  
voltage tolerances.  
Electrical Parameters  
Part  
V
V
V
I
I
I
I
C
DRM  
S
T
DRM  
S
T
H
O
Number *  
Volts  
140  
Volts  
180  
220  
260  
Volts  
µAmps  
mAmps  
800  
Amps **  
2.2/25  
2.2/25  
2.2/25  
mAmps  
50  
pF  
P1500ME  
P1900ME  
P2300ME  
4
4
4
5
5
5
750  
750  
750  
140  
180  
800  
800  
50  
50  
* For surge ratings, see table below.  
** I is a free air rating; heat sink I rating is 25 A.  
T
T
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias and is a typical value.  
O
Surge Ratings  
I
I
TSM  
PP  
8x20 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps/µs  
E
5000  
400  
630  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 62  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  

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