Datasheet > P1801DM

P1801DM

更新时间： 2024-09-17 14:53:19

品牌	Logo	应用领域
捷捷微 - JJM		半导体
页数	文件大小	规格书
5页	250K
描述
半导体放电管

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数据手册

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P1801DM 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

Pxxx1DM TSS

Rev.1.3

DESCRIPTION

Pxxx1DM devices are a type of semiconductor component.

They are designed for transient surge protection.

SOD-123FL

FEATURES

 Excellent capability of absorbing transient surge.

 Quick response to surge voltage (ns Level).

 Eliminates overvoltage caused by fast rising transients.

 Moisture sensitivity level: Level 1.

 Fails short circuit when surged in excess of ratings.

 IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact).

 Non degenerative.

Symbol

ABSOLUTE MAXIMUM RATINGS(T_A=25℃, RH=45%-75%, unless otherwise noted)

Parameter

Symbol

T_STG

T_J

Value

Unit

℃

Storage temperature range

-60 to +150

-40 to +125

Operating junction temperature range

Repetitive peak pulse current@10/1000μs

Typical thermal resistance junction to ambient

℃

I_PP

R_θJA

220

℃/W

ELECTRICAL CHARACTERISTICS(T_A=25℃)

Symbol

V_DRM

I_DRM

V_S

Parameter

Peak off-state voltage

Off-state current

V‐I Curve

I^T

I^S

Switching voltage

I_S

Switching current

DRM

-V

V_T

On-state voltage

DRM

I_T

On-state current

I_H

Holding current

C_O

Off-state capacitance

Reverse breakdown voltage

Reverse breakdown current

-I

V_BR

I_BR

TEL：+86-513-83639777

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