Datasheet > P1560JD

P1560JD

更新时间： 2024-06-26 08:51:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	326K
描述
TO-252

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中文翻译

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数据手册

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P1560JD 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P1560JD

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

600V

R_DS(ON)

I_D

15A

310mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

600

UNITS

Gate-Source Voltage

V_GS

±30

T_C= 25 ° C

Continuous Drain Current²

I_D

T_C= 100 ° C

8.7

Pulsed Drain Current¹

Avalanche Current ³

Avalanche Energy³

I_DM

I_AS

2.3

E_AS

198

T_C= 25 ° C

Power Dissipation

P_D

T_C= 100 ° C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

° C / W

1.3

R_JC

R_JA

62.5

¹Pulse width limited by maximum junction temperature.

²Ensure that the channel temperature does not exceed 150°C.

³V_DD= 50V , L = 75mH ,starting T_J= 25°C.

N-19-1

REV 1.0

12 3 4

中文翻译

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