Datasheet > P1306EK

P1306EK

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	352K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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P1306EK 数据手册

P-Channel Logic Level Enhancement Mode

Field Effect Transistor

P1306EK

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-60V

R_DS(ON)

I_D

-43A

13.5mΩ

G. GATE

D. DRAIN

S. SOURCE

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

-60

UNITS

V_DS

V_GS

Gate-Source Voltage

±25

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

-43

-27

Continuous Drain Current

I_D

-10

-8.3

-149

-52

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

135

Power Dissipation³

P_D

2.7

1.7

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

Junction-to-Ambient²

Steady-State

°C / W

R_JA

Junction-to-Case

2.6

Steady-State

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25° C. The value in any given application depends on the user's specific board design.

³The Power dissipation is based on R_JAt ≦10s value.

L-29-2

REV1.0

12 3 4 5

中文翻译

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