Datasheet > P121

P121

更新时间： 2024-09-14 22:27:39

品牌	Logo	应用领域
POLYFET		晶体栅极晶体管局域网
页数	文件大小	规格书
2页	36K
描述
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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P121 数据手册

polyfet rf devices

P121

PATENTED GOLD METALLIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

1.0 Watts Single Ended

Package Style SO8

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

ABSOLUTE MAXIMUM RATINGS ( T = 25 C )

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

C/W

0.8

10 Watts

200 C

-65 C to 150 C

50V

30 V

15.00

RF CHARACTERISTICS (

1.0WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.20 A, Vds = 12.5 V, F = 850

Gps

Common Source Power Gain

Drain Efficiency

MHz

Idq =

0.20

A, Vds = 12.5 V, F = 850 MHz

Idq = 0.20

A, Vds = 12.5 V, F = 850

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 0.01 A, Vgs = 0V

Vds =

Bvdss

Idss

0.2

Zero Bias Drain Current

Gate Leakage Current

12.5 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.02 A, Vgs = Vds

0.2

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids = 1.60 A

2.00

2.30

7.5

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

12.5 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

12.5 Vgs = 0V, F = 1 MHz

1.2

8.0

REVISION 06/19/2000

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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