Datasheet > P11C68-DPBS

P11C68-DPBS

更新时间： 2024-11-12 04:11:35

品牌	Logo	应用领域
加拿大卓联 - ZARLINK		静态存储器
页数	文件大小	规格书
17页	156K
描述
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM

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P11C68-DPBS 数据手册

P10C68/P11C68

PRELIMINARY INFORMATION

DS3600-1.2 September 1992

P10C68/P11C68

(Previously PNC10C68 and PNC11C68

)

CMOS/SNOS NVSRAM

HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM

(Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)

The P10C68 and P11C68 are fast static RAMs (35 and 45

ns) with a non-volatile electically-erasable PROM (EEPROM)

cell incorporating in each static memory cell. The SRAM can

be read and written an unlimited number of times while

independent non-volatile data resides in PROM.

V_CC

A₁₂

On the P10C68 data may easily be transferred from the

SRAM to the EEPROM (STORE) and from the EEPROM back

to the SRAM ( RECALL) using the NE (bar) pin. The Store and

Recall cycles are initiated through software sequences on the

P11C68. These devices combine the high performance and

ease of use of a fast SRAM with the data integrity of non-

volatility.

The P10C68 and P11C68 feature the industry standard

pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and

ceramic dual-in-line packages.

A₈

A₇

A₆

A₉

A₅

A₁₁

A₄

A₃

A₁₀

A₂

A₁

DQ₇

DQ₆

DQ₅

DQ₄

DQ₃

A₀

DQ₀

DQ₁

DQ₂

V_ss

FEATURES

I Non-Volatile Data Integrity

Pin Name

Function

I 10 year Data Retention in EEPROM

I 35ns and 45ns Address and Chip Enable Access Times

I 20ns and 25ns Output Enable Access

I Unlimited Read and Write to SRAM

I Unlimited Recall Cycles from EEPROM

I 10⁴Store Cycles to EEPROM

I Automatic Recall on Power up

I Automatic Store Timing

A - A

Address inputs

Write enable

Data in/out

Chip enable

Output enable

Power (+5V)

Ground

Non volatile enable P10C68

No connection

DQ - DQ

Pin 1 NE

Pin 1 N/C

P11C68

I Hardware Store Protection

Figure 1. Pin connections - top view.

I Single 5V ꢀ 10% Operation

I Available in Standard Package 28-pin 0.3-inch DIL

plastic and ceramic

I Commercial and Industrial temperature ranges

ORDERING INFORMATION

(See back page)

12 3 4 5 6 7...17

中文翻译

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与P11C68-DPBS相关器件

型号	品牌	获取价格	描述	数据表
P11C68-IG	ZARLINK	获取价格	CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11C68-IGDCBS	ZARLINK	获取价格	CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11C68-IGDPBS	ZARLINK	获取价格	CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11D1F0GGSW10224MS	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.5W, 220000ohm, 332V, 20% +/-Tol, -500,500ppm/Cel,
P11D1F0GJSA23500K20%AE3	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.25W, 500000ohm, 350V, 20% +/-Tol, -500,500ppm/Cel,
P11D1FAGGSA20222MA	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.5W, 2200ohm, 33.2V, 20% +/-Tol, -500,500ppm/Cel,
P11D1FAGGSW20473MS	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.5W, 47000ohm, 153V, 20% +/-Tol, -500,500ppm/Cel,
P11D1FAGGSX00472MS	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.5W, 4700ohm, 48.5V, 20% +/-Tol, -500,500ppm/Cel,
P11D1FAGJSW10472MS	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.5W, 4700ohm, 48.5V, 20% +/-Tol, -500,500ppm/Cel,
P11D1FAGJSZ23224MS	VISHAY	获取价格	Potentiometer, Conductive Plastic, 0.5W, 220000ohm, 332V, 20% +/-Tol, -500,500ppm/Cel,

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