5秒后页面跳转
P11C68-35IGDPBS PDF预览

P11C68-35IGDPBS

更新时间: 2024-11-12 04:11:35
品牌 Logo 应用领域
加拿大卓联 - ZARLINK 静态存储器
页数 文件大小 规格书
17页 156K
描述
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM

P11C68-35IGDPBS 数据手册

 浏览型号P11C68-35IGDPBS的Datasheet PDF文件第2页浏览型号P11C68-35IGDPBS的Datasheet PDF文件第3页浏览型号P11C68-35IGDPBS的Datasheet PDF文件第4页浏览型号P11C68-35IGDPBS的Datasheet PDF文件第5页浏览型号P11C68-35IGDPBS的Datasheet PDF文件第6页浏览型号P11C68-35IGDPBS的Datasheet PDF文件第7页 
PRELIMINARY INFORMATION  
DS3600-1.2 September 1992  
P10C68/P11C68  
(Previously PNC10C68 and PNC11C68  
)
CMOS/SNOS NVSRAM  
HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM  
(Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)  
The P10C68 and P11C68 are fast static RAMs (35 and 45  
ns) with a non-volatile electically-erasable PROM (EEPROM)  
cell incorporating in each static memory cell. The SRAM can  
be read and written an unlimited number of times while  
independent non-volatile data resides in PROM.  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
W
NE  
A12  
On the P10C68 data may easily be transferred from the  
SRAM to the EEPROM (STORE) and from the EEPROM back  
to the SRAM ( RECALL) using the NE (bar) pin. The Store and  
Recall cycles are initiated through software sequences on the  
P11C68. These devices combine the high performance and  
ease of use of a fast SRAM with the data integrity of non-  
volatility.  
The P10C68 and P11C68 feature the industry standard  
pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and  
ceramic dual-in-line packages.  
3
NC  
A8  
A7  
A6  
4
5
A9  
A5  
6
A11  
G
A4  
7
A3  
8
A10  
E
A2  
9
A1  
10  
11  
12  
13  
14  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A0  
DQ0  
DQ1  
DQ2  
Vss  
FEATURES  
I Non-Volatile Data Integrity  
Pin Name  
Function  
I 10 year Data Retention in EEPROM  
I 35ns and 45ns Address and Chip Enable Access Times  
I 20ns and 25ns Output Enable Access  
I Unlimited Read and Write to SRAM  
I Unlimited Recall Cycles from EEPROM  
I 104 Store Cycles to EEPROM  
I Automatic Recall on Power up  
I Automatic Store Timing  
A - A  
W
Address inputs  
Write enable  
Data in/out  
Chip enable  
Output enable  
Power (+5V)  
Ground  
Non volatile enable P10C68  
No connection  
0
12  
DQ - DQ  
0
7
E
G
V
CC  
V
SS  
Pin 1 NE  
Pin 1 N/C  
P11C68  
I Hardware Store Protection  
Figure 1. Pin connections - top view.  
I Single 5V 10% Operation  
I Available in Standard Package 28-pin 0.3-inch DIL  
plastic and ceramic  
I Commercial and Industrial temperature ranges  
ORDERING INFORMATION  
(See back page)  
1

与P11C68-35IGDPBS相关器件

型号 品牌 获取价格 描述 数据表
P11C68-45 ZARLINK

获取价格

CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11C68-45/CG/DCBS ZARLINK

获取价格

Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28
P11C68-45/CG/DPBS MICROSEMI

获取价格

Non-Volatile SRAM, 8KX8, 45ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
P11C68-45/IG/DCBS ZARLINK

获取价格

Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28
P11C68-45/IG/DCBS MICROSEMI

获取价格

8KX8 NON-VOLATILE SRAM, 45ns, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28
P11C68-45/IG/DPBS MICROSEMI

获取价格

8KX8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28
P11C68-45CG ZARLINK

获取价格

CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11C68-45CGDCBS ZARLINK

获取价格

CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11C68-45CGDPBS ZARLINK

获取价格

CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
P11C68-45DCBS ZARLINK

获取价格

CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM