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P100PH06FLO PDF预览

P100PH06FLO

更新时间: 2024-11-12 17:34:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 175A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element

P100PH06FLO 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-MUPM-H3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大均方根通态电流:175 A断态重复峰值电压:600 V
重复峰值反向电压:600 V表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

P100PH06FLO 数据手册

 浏览型号P100PH06FLO的Datasheet PDF文件第2页 

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