5秒后页面跳转
P100CH06FHO PDF预览

P100CH06FHO

更新时间: 2024-09-25 09:15:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 440 A, 600 V, SCR

P100CH06FHO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:200 mA
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:440 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

P100CH06FHO 数据手册

 浏览型号P100CH06FHO的Datasheet PDF文件第2页 

与P100CH06FHO相关器件

型号 品牌 获取价格 描述 数据表
P100CH06FJ IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
P100CH06FJ0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),336A I(T),TO-200AB
P100CH06FJO IXYS

获取价格

Silicon Controlled Rectifier, 440 A, 600 V, SCR
P100CH06FL IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
P100CH06FLO IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element
P100CH06FM IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
P100CH06FM0 IXYS

获取价格

Silicon Controlled Rectifier, 336000mA I(T), 600V V(DRM)
P100CH06FN0 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 336000mA I(T), 600V V(DRM),
P100CH08CH IXYS

获取价格

Silicon Controlled Rectifier, 440 A, 800 V, SCR, TO-200AB
P100CH08CH0 IXYS

获取价格

Silicon Controlled Rectifier, 336000mA I(T), 800V V(DRM)