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P1001 PDF预览

P1001

更新时间: 2024-11-26 20:52:07
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
3页 231K
描述
Wide Band Medium Power Amplifier, 26000MHz Min, 40000MHz Max, DIE-13

P1001 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.13构造:COMPONENT
增益:11 dB最大输入功率 (CW):14 dBm
JESD-609代码:e3最大工作频率:40000 MHz
最小工作频率:26000 MHz射频/微波设备类型:WIDE BAND MEDIUM POWER
端子面层:Matte Tin (Sn)Base Number Matches:1

P1001 数据手册

 浏览型号P1001的Datasheet PDF文件第2页浏览型号P1001的Datasheet PDF文件第3页 
26.0-40.0 GHz GaAs MMIC  
Power Amplifier  
June 2001 - Rev 6/06/01  
P1001  
Features  
Chip Device Layout  
26.0-40.0 GHz Frequency Range  
12 dB Typical Small Signal Gain  
Excellent Input/Output Return Loss  
+36.0 dBm Typical Third Order Intercept Point (IP3)  
Operates at +5.5 VDC  
P1001  
3.00 mm X 2.50 mm Die Size  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s two stage 26.0-40.0 GHz GaAs  
MMIC power amplifier is optimized for linear operation  
with a typical third order intercept point of +36.0 dBm.  
The device also has a typical small signal gain of 12.0  
dB and includes Lange couplers to achieve good  
input/output return loss. This MMIC uses Mimix  
Broadband’s 0.15 >m GaAs PHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and uniformity.  
The chip has surface passivation to protect and provide  
a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or  
eutectic solder die attach process. This device is well  
suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+5.6 Vdc  
650 mA  
+0.3 Vdc  
+10.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to +75 OC  
Channel Temperature (Tch) 125 OC  
Thermal Resistance (θjc)  
35 OC/W  
Electrical Characteristics (Ambient Temperature T=25oC)  
Parameter  
Units  
GHz  
dB  
Min.  
26.0  
15.0  
15.0  
10.0  
-
Typ.  
-
Max.  
40.0  
-
Frequency Range (f)  
Input Return Loss (S11)  
18.0  
18.0  
12.0  
+/-1.0  
40.0  
+24.0  
+36.0  
5.5  
-
dB  
Output Return Loss (S22)  
-
dB  
Small Signal Gain (S21)  
-
dB  
Gain Flatness (S21)  
-
dB  
Reverse Isolation (S12)  
-
-
dBm  
dBm  
Vdc  
Vdc  
mA  
Output Power for 1dB Compression (P1dB)  
Output Third Order Intercept (IP3)  
Drain Bias Voltage (Vd1,2,3,4)  
Gate Bias Voltage (Vg1,2,3,4)  
Supply Current (Id) (Vd=5.5V, Vg=-0.3V Typical)  
-
-
-
5.6  
+0.3  
650  
-
-0.3  
430  
-1.0  
-
Page 1 of 3  
Mimix Broadband, 520 West NASA Road One, Webster, Texas 77598  
Telephone: 281.526.0536 Fax: 281.526.0541 Website: www.mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2001 Mimix Broadband.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers  
accept their obligation to be compliant with U.S. Export Laws.  

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