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P1000P1

更新时间： 2024-09-24 20:06:11
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
6页 186K
描述
Wide Band Low Power Amplifier, 17000MHz Min, 24000MHz Max,

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P1000P1 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.17构造：COMPONENT
增益：14 dB最大输入功率 (CW)：9 dBm
最大工作频率：24000 MHz最小工作频率：17000 MHz
最低工作温度：-55 °C射频/微波设备类型：WIDE BAND LOW POWER
Base Number Matches：1

P1000P1 数据手册

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17.0-24.0 GHz GaAs MMIC  
Surface Mount Power Amplifier  
March 2005 - Rev 01-Mar-05  
P1000P1  
Features  
Packaged Chip Device  
Surface Mount Leadless Package  
High Linearity Output Amplifier  
Temperature Compensated Output Power Detector  
Excellent Input/Output Match  
18.0 dB Small Signal Gain  
+35.0 dBm Third Order Intercept (OIP3)  
100% RF and DC Testing  
General Description  
Mimix Broadband's two stage XP1000 GaAs MMIC power  
amplifier is supplied in a surface mount leadless chip  
carrier compatible with high volume surface mount  
components.This power amplifier is optimized for linear  
operation with a typical third order intercept point of  
+35.0 dBm.The device also achieves excellent input/output  
return loss and includes a temperature compensated  
output power detector.This packaged MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model  
technology, and is based upon electron beam lithography  
to ensure high repeatability and uniformity.This device is  
well suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
700 mA  
+0.3 VDC  
+9.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to See Note  
4
(4) Channel temperature affects a device’s MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Units  
GHz  
dB  
dB  
dB  
Min.  
17.0  
12.0  
14.0  
14.0  
-
30.0  
-
-
Typ.  
-
Max.  
24.0  
-
-
20.0  
-
-
-
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness (∆S21)  
Reverse Isolation (S12)  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6KΩ)  
Gate Bias Voltage (Vg1,2,3,4)  
17.0  
17.0  
18.0  
+/-1.0  
40.0  
+24.0  
+35.0  
+5.5  
-0.5  
dB  
dB  
2
dBm  
dBm  
VDC  
VDC  
mA  
VDC  
1,2  
-
-
+5.6  
0.0  
650  
0.35  
-1.0  
-
0.21  
Supply Current (Id) (Vd=5.5V,Vg=-0.5V Typical)  
Detector (diff) Output at 20 dBm  
430  
0.28  
3
(1) Measured at 16 dBm per tone output carrier level at 22 GHz.  
(2) Measured using constant current.  
(3) Measured with either Vd5=I.0V, or Vd5=5.5V and Rd=5.6KΩ.  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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