Datasheet > P1000D

P1000D

更新时间： 2024-11-10 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	489K
描述
10.0A plug-in rectifier diode 200V R-6 series

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中文翻译

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数据手册

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P1000D 数据手册

P1000A - P1000M

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 10.0 A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case:R-6 Molded Plastic

Terminals: Axial Leads, Solderable per

MIL-STD-202, Method 208

Polarity: Color Band Indicates Cathode

Approx. Weight: 1.7 grams

R-6

Dim

Min

25.4

8.6

Max

—

Mounting Position: Any

9.1

1.3

1.2

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristi

Symbol P1000A P1000B P1000D P1000G P1000J P1000K P1000M Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

Average Rectified Output Current

(Note 1)

@T_A= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

600

1.0

Forward Voltage

@I_F= 10A

V^FM

I^RM

C^j

Peak Reverse Current

@T_A= 25°C

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 2)

150

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

°C/W

Operating Temperature Range

Storage Temperature Range

T^j

-50 to +150

°C

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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